Biomimetic nanosurfaces with distinct wettability and versatility have found special
enthusiasm in both fundamental research and industrial applications. With the advent of …

Developing a low-temperature fabrication strategy of an amorphous InGaZnO (α-IGZO)
channel layer is a prerequisite for high-performance oxide-based thin film transistor (TFT) …

Since 2010, vacuum‐processed oxide semiconductors have greatly improved with the
publication of more than 1,300 related papers. Although the number of researches on oxide …

In this work, low temperature fabrication of a sputtered high-k HfO 2 gate dielectric for
flexible a-IGZO thin film transistors (TFTs) on polyimide substrates was investigated. The …

Metal-oxide thin-film transistors (MO TFTs) with suitable device performances such as high
field-effect mobility (μ FE), low subthreshold swing, high ON/OFF current ratio, and excellent …

Various studies have been conducted to improve TFT's processing methods and
characteristics. In this study, we conducted an experiment to produce a high-performance …

Solution‐processed indium‐gallium‐zinc oxide (IGZO) thin film transistors (TFTs) have
become well known in recent decades for their promising commercial potential. However …

Development of highly active and durable catalysts for oxygen reduction reaction (ORR)
alternative to Pt-based catalyst is an essential topic of interest in the research community but …

In this work, a non-toxic and environmentally friendly aqueous-solution-based method has
been adopted to prepare gadolinium-doped hafnium oxide (HfO 2) gate dielectric thin films …

For high-performance and high-lifetime flexible and wearable electronic applications, a low-
temperature posttreatment method is highly expected to enhance the device performance …