A monolithically integrated plasmonic infrared quantum dot camera

SJ Lee, Z Ku, A Barve, J Montoya, WY Jang… - Nature …, 2011 - nature.com
In the past few years, there has been increasing interest in surface plasmon-polaritons, as a
result of the strong near-field enhancement of the electric fields at a metal–dielectric …

Ultra-thin plasmonic detectors

L Nordin, P Petluru, A Kamboj, AJ Muhowski… - Optica, 2021 - opg.optica.org
Plasmonic materials, and their ability to enable strong concentration of optical fields, have
offered a tantalizing foundation for the demonstration of sub-diffraction-limit photonic …

Infrared photodetector sensitized by InAs quantum dots embedded near an Al0.3Ga0.7As/GaAs heterointerface

T Murata, S Asahi, S Sanguinetti, T Kita - Scientific Reports, 2020 - nature.com
Mid-infrared sensors detect infrared radiation emitted from objects, and are actually widely
used for monitoring gases and moisture as well as for imaging objects at or above room …

InAs/GaAs p-type quantum dot infrared photodetector with higher efficiency

YF Lao, S Wolde, AG Unil Perera, YH Zhang… - Applied Physics …, 2013 - pubs.aip.org
An InAs/GaAs quantum dot infrared photodetector (QDIP) based on p-type valence-band
intersublevel hole transitions as opposed to conventional electron transitions is reported …

Confinement enhancing barriers for high performance quantum dots-in-a-well infrared detectors

AV Barve, S Sengupta, JO Kim, YD Sharma… - Applied Physics …, 2011 - pubs.aip.org
We demonstrate the use of thin AlGaAs barrier layers in the quantum dots in a well
heterostructure to enhance the quantum confinement of carriers in the excited energy level …

Room temperature and high responsivity short wavelength II-VI quantum well infrared photodetector

AP Ravikumar, G Chen, K Zhao, Y Tian… - Applied Physics …, 2013 - pubs.aip.org
We report the experimental demonstration of a room temperature, high responsivity, short
wavelength II-VI Zn 0.51 Cd 0.49 Se/Zn 0.29 Cd 0.26 Mg 0.45 Se based quantum well …

Temperature-dependent energy band gap variation in self-organized InAs quantum dots

I Yeo, J Dong Song, J Lee - Applied Physics Letters, 2011 - pubs.aip.org
We investigated the temperature-dependent variation of the photoluminescence emission
energy of self-organized InAs/GaAs quantum dots (QDs) grown by conventional Stranski …

[HTML][HTML] High-speed long-wave infrared ultra-thin photodetectors

Y Wang, AJ Muhowski, L Nordin, S Dev, M Allen… - APL Photonics, 2024 - pubs.aip.org
The primary challenge for long-wavelength infrared (λ= 8–13 µm) detection has long been
the mitigation of dark current while achieving a high conversion efficiency of optical to …

[HTML][HTML] Two-band ZnCdSe/ZnCdMgSe quantum well infrared photodetector

Y Kaya, A Ravikumar, G Chen, MC Tamargo, A Shen… - AIP Advances, 2018 - pubs.aip.org
An independently controllable, two-band quantum well infrared photo-detector (QWIP)
based on the ZnCdSe/ZnCdMgSe material system is characterized. The two-band detector …

Analysis of subwavelength metal hole array structure for the enhancement of back-illuminated quantum dot infrared photodetectors

Z Ku, WY Jang, J Zhou, JO Kim, AV Barve, S Silva… - Optics express, 2013 - opg.optica.org
This paper is focused on analyzing the impact of a two-dimensional metal hole array
structure integrated to the back-illuminated quantum dots-in-a-well (DWELL) infrared …