This letter presents the design approach for a compact, single-stage, wideband MMIC power
amplifier. A method is proposed to compensate for the output capacitance of the active …

A method to design a wideband, low-loss, and high-current choke inductor suitable for use
in a distributed power amplifier (DPA) is presented. The choke inductor is composed of …

In this paper, the design and analysis of a 2.0 to 18.0 GHz distributed high-power amplifier
(DHPA) monolithic microwave integrated circuit (MMIC) on 150-nm GaN-SiC HEMT process …

This paper presents the design and measurement of a 1–6 GHz GaN MMIC power amplifier
module. The MMIC PAs and power combiner are fabricated on 100µm silicon carbide using …

This paper presents the design and measurement of a two-stage, 2-20 GHz GaN MMIC
power amplifier fabricated on 100 µm silicon carbide using Qorvo's QGaN15 released …

This paper presents the design and measurement of a two-stage, 2-20 GHz GaN MMIC
power amplifier fabricated on 100µm silicon carbide using Qorvo's QGaN15 released …

This paper demonstrates a fully integrated high-output-power, ultra-wideband, and
reconfigurable power amplifier. Based on the improved non-uniform distributed structure, a …

This paper describes the design and measured performance of a 4 to 16 GHz non-uniform
distributed amplifier fabricated in a 0.15 μm commercial GaN process. The amplifier has 8.7 …

This paper introduces a compact 2-6 GHz power amplifier (PA) MMIC utilizing Sanan's 0.25-
μ m gallium nitride high-electron-mobility transistor (GaN HEMT) technology. The design …

This paper describes the novel power combining strategy and measured performance of a 5
to 18 GHz non-uniform distributed power amplifier fabricated in a 0.15 µm commercial GaN …