State of the art in 60-GHz integrated circuits and systems for wireless communications

TS Rappaport, JN Murdock… - Proceedings of the …, 2011 - ieeexplore.ieee.org
This tutorial presents an overview of the technological advances in millimeter-wave (mm-
wave) circuit components, antennas, and propagation that will soon allow 60-GHz …

Symmetric Offset Stack Balun in Standard 0.13- CMOS Technology for Three Broadband and Low-Loss Balanced Passive Mixer Designs

HK Chiou, JY Lin - IEEE transactions on microwave theory and …, 2011 - ieeexplore.ieee.org
This paper presents symmetric offset stack Marchand single and dual baluns that are
designed, analyzed, and implemented in a 0.18-μm CMOS process to verify the feasibility …

Wideband millimeter-wave active and passive mixers in 28 nm bulk CMOS technology

D Parveg, M Varonen, M Kärkkäinen… - 2015 10th European …, 2015 - ieeexplore.ieee.org
A compact 129-140 GHz Gilbert-cell mixer for up-conversion and 127-140 GHz image-
rejection (IR) resistive mixer for down-conversion are realized for a 140-GHz transceiver in …

CMOS I/Q subharmonic mixer for millimeter-wave atmospheric remote sensing

D Parveg, M Varonen, P Kangaslahti… - IEEE Microwave and …, 2016 - ieeexplore.ieee.org
A compact second harmonic 180 GHz I/Q balanced resistive mixer is realized in a 32-nm
SOI CMOS technology for atmospheric remote sensing applications. The MMIC further …

An innovative joint-injection mixer with broadband IF and RF for advanced heterodyne receivers of millimeter-wave astronomy

YC Wu, YJ Hwang, CC Chiong, BZ Lu… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
An innovative mixing unit of the proposed mixer named joint-injection-mixer (JIM) features
both wide IF and RF bandwidths (BWs) for next-generation advanced heterodyne receivers …

A W-band 65nm CMOS transmitter front-end with 8GHz IF bandwidth and 20dB IR-ratio

D Sandström, M Varonen, M Kärkkäinen… - … Solid-State Circuits …, 2010 - ieeexplore.ieee.org
A W-band transmitter front-end has been implemented in 65 nm CMOS. The output power is
higher than+ 4 dBm from 77 GHz to 94 GHz with an image rejection ratio from 15 dB to 25 …

A novel 30–90-GHz singly balanced mixer with broadband LO/IF

YC Wu, CC Chiong, JH Tsai… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
An innovative mixer architecture using gate-and drain-pumped with combining drain
terminals of nMOS transistors is proposed to enhance IF and local oscillator (LO) operation …

Unitraveling-carrier-photodiode-integrated high-electron-mobility transistor for photonic double-mixing

A Satou, Y Omori, K Nishimura, T Hosotani… - Journal of Lightwave …, 2021 - opg.optica.org
We newly propose and experimentally investigate an InGaAs-channel high-electron-mobility
transistor integrated with a unitraveling-carrier photodiode (UTC-PD) structure on its source …

An mm-wave CMOS I–Q subharmonic resistive mixer for wideband zero-IF receivers

D Parveg, M Varonen, A Safaripour… - IEEE Microwave and …, 2020 - ieeexplore.ieee.org
In this letter, we propose a novel wideband subharmonically pumped fully differential IQ
resistive mixer architecture, which eliminates the necessity for on-chip dc-blocking …

A linear 70-95 GHz differential IQ modulator for E-band wireless communication

M Gavell, H Zirath, M Ferndahl… - 2010 IEEE MTT-S …, 2010 - ieeexplore.ieee.org
In this paper, a direct IQ modulator MMIC with a novel differential architecture, for high speed
E-band wireless communication is presented. The IQ modulator consists of two balanced …