Silicon spin qubits stand out due to their very long coherence times, compatibility with
industrial fabrication, and prospect to integrate classical control electronics. To achieve a …

As of date many NBTI models have been published which aim to successfully capture the
essential physics. As such, these models have mostly focused on the stress phase. The …

Due to presence of magnetic field gradient needed for coherent spin control, dephasing of
single-electron spin qubits in silicon quantum dots is often dominated by 1/f charge noise …

This paper examines the atomic-scale defects involved in a metal-oxide-silicon field-effect-
transistor reliability problem called the negative-bias temperature instability (NBTI). NBTI has …

Electronic and dielectric properties of vapor-phase grown MoS2 have been investigated in
metal/MoS2/silicon capacitor structures by capacitance–voltage and conductance-voltage …

SEMICONDUCTOR process and device simulators are well established tools for the
reduction of the development time for semiconductor devices. Numerical simulation can help …

We demonstrate “on the fly” electron spin resonance (ESR) in which the defect generation
process in the negative bias temperature instability (NBTI) can be observed without recovery …

Many recent publications discussing the stress and recovery behavior of bias temperature
instability (BTI) have suggested the existence of two components contributing to the …

This paper addresses a fundamental question on the physics of negative bias temperature
instability (NBTI). Besides interface states, is oxide trapped charge (ie, trapped holes) …

The trap parameters of defects in Si/CaF 2 multilayered structures were determined from the
analysis of optical charging spectroscopy measurements. Two kinds of maxima were …