Transparent electronics is today one of the most advanced topics for a wide range of device
applications. The key components are wide bandgap semiconductors, where oxides of …

The fabrication process and the characteristics of bottom-gate Ga 2 O 3-In 2 O 3-ZnO (GIZO)
thin-film transistors (TFTs) are reported in detail. Experimental results show that oxygen …

Constant-voltage-bias (V DS= V GS= 30 V) stress measurements are performed for a period
of 10 5 s on thin-film transistors (TFTs) with amorphous indium-gallium-zinc-oxide (IGZO) …

In this letter, we report the fabrication of an amorphous indium gallium zinc oxide (a-IGZO)
thin-film transistor with a high-k dielectric layer on a glass substrate. The room-temperature …

An object is to provide favorable interface characteristics of a thin film transistor including an
oxide semiconductor layer without mixing of an impurity such as moisture. Another object is …

We report on the device characteristics of amorphous indium gallium zinc oxide thin-film
transistors (TFTs) with aluminum (Al) electrodes. The TFTs exhibited a high performance …

Thin-film transistors (TFTs) with channels made of hydrogenated amorphous silicon (a-Si: H)
and polycrystalline silicon (poly-Si) are used extensively in the display industry. Amorphous …

This study investigates a sputtered InGaZnO (IGZO) thin film to apply into a resistive random
access memory device. After the formation of an indium tin oxide (ITO)/IGZO/ITO structure at …

We report a flexible AMOLED display driven by oxide thin film transistors (TFTs) with anodic
AlOx gate dielectric on a polyethylene naphthalate (PEN) substrate with a process …

High-performance amorphous (α−) InGaZnO-based thin film transistors (TFTs) were
fabricated on flexible polyethylene terephthalate substrates coated with indium oxide (In 2 O …