The validity of the classical nucleation theory (CNT), the most important tool to describe and
predict nucleation kinetics in supercooled liquids, has been at stake for almost a century …

A well-designed study of the relationship between crystal nucleation and relaxation in
supercooled liquids could clarify some critical issues in condensed matter science. In this …

The sensitivity of collision cascades simulations to the Two-Temperature Model main
parameters is investigated by performing an extensive statistical study both in Si and Ge …

The defect evolution of primary radiation damage in SiGe alloys induced by single (Si or Ge)
and binary (Si and Ge) primary knock-on atoms (PKAs) under different temperatures was …

The inclusion of sophisticated density-dependent electronic stopping and electron-phonon
coupling calculated with first-principles methods into molecular dynamics simulations of …

Primary simulations of neutron interactions are performed on Si 1-x Ge x alloys with a Monte
Carlo (MC) code using the binary collision approximation (BCA). Then, a statistical study of …

Ion implantation has been a key technology for the controlled surface modification of
materials in microelectronics and generally, for tribology, biocompatibility, corrosion …

Heteroepitaxial films of Ge on Si (001) are receiving wide attention due to several possible
applications in micro-and opto-electronics. Understanding the dynamic behavior of linear …

The crystallization processes of amorphous Ge as well as the atomistic structures of the
growth front were examined by molecular-dynamics simulations. An amorphous Ge network …

To assess the sensitivity of microelectronic devices to displacement damage, molecular
dynamics simulations of collision cascades in GaN, Si and Ge are performed. We compare …