Neuromorphic sensorimotor loop embodied by monolithically integrated, low-voltage, soft e-skin
Artificial skin that simultaneously mimics sensory feedback and mechanical properties of
natural skin holds substantial promise for next-generation robotic and medical devices …
natural skin holds substantial promise for next-generation robotic and medical devices …
Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors
Amorphous oxide semiconductors have drawn considerable attention as a replacement for
ubiquitous silicon based technologies. By virtue of their flexible substrate compatibility and …
ubiquitous silicon based technologies. By virtue of their flexible substrate compatibility and …
Recent developments of flexible InGaZnO thin‐film transistors
Flexible InGaZnO thin‐film transistors (TFTs) have been extensively investigated over the
last decade with an aim to transferring electronic devices from rigid substrates to light …
last decade with an aim to transferring electronic devices from rigid substrates to light …
Near-ideal top-gate controllability of InGaZnO thin-film transistors by suppressing interface defects with an ultrathin atomic layer deposited gate insulator
An ultrathin atomic-layer-deposited (ALD) AlO x gate insulator (GI) was implemented for self-
aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). Although …
aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). Although …
Effects of crystalline structure of IGZO thin films on the electrical and photo-stability of metal-oxide thin-film transistors
Y Kang, W Lee, J Kim, K Keum, SH Kang, JW Jo… - Materials Research …, 2021 - Elsevier
In this paper, we investigated the effects of crystalline structure of indium-gallium-zinc-oxide
(IGZO) thin films on the electrical and photo-stability of metal-oxide thin-film transistors …
(IGZO) thin films on the electrical and photo-stability of metal-oxide thin-film transistors …
Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity
We report high performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film
transistors (TFTs) with 10 nm atomic-layer-deposited HfO2 as the gate dielectric, achieving …
transistors (TFTs) with 10 nm atomic-layer-deposited HfO2 as the gate dielectric, achieving …
One-volt, solution-processed InZnO thin-film transistors
In this letter, we report solution-processed, high-performance Indium-Zinc-Oxide (IZO) thin-
film transistors (TFTs). The annealing temperature of IZO films are studied and found that …
film transistors (TFTs). The annealing temperature of IZO films are studied and found that …
Significant performance enhancement of very thin InGaZnO thin-film transistors by a self-assembled monolayer treatment
The use of amorphous InGaZnO (IGZO) has become more and more popular especially in
display technologies because of its high mobility, excellent large area uniformity, and low …
display technologies because of its high mobility, excellent large area uniformity, and low …
High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO2 Gate Dielectric
J Yang, Y Zhang, Q Wu, C Dussarrat… - … on Electron Devices, 2019 - ieeexplore.ieee.org
The high-performance ZnO thin-film transistors (TFTs) were fabricated on indium tin oxide
glass with high-capacitance atomic layer deposition (ALD)-processed ZrO2 as the gate …
glass with high-capacitance atomic layer deposition (ALD)-processed ZrO2 as the gate …
High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs With 4 nm-Thick Atomic-Layer-Deposited AlOx Insulator
Electrical characteristics of self-aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-
film transistors (TFTs) with 4 nm-thick atomic-layer-deposited (ALD) AlO x gate insulator (GI) …
film transistors (TFTs) with 4 nm-thick atomic-layer-deposited (ALD) AlO x gate insulator (GI) …