Liquid metals: an ideal platform for the synthesis of two-dimensional materials

P Aukarasereenont, A Goff, CK Nguyen… - Chemical Society …, 2022 - pubs.rsc.org
The surfaces of liquid metals can serve as a platform to synthesise two-dimensional
materials. By exploiting the self-limiting Cabrera-Mott oxidation reaction that takes place at …

Emerging 2D metal oxides: from synthesis to device integration

K Zhou, G Shang, HH Hsu, ST Han… - Advanced …, 2023 - Wiley Online Library
Abstract 2D metal oxides have aroused increasing attention in the field of electronics and
optoelectronics due to their intriguing physical properties. In this review, an overview of …

Vacuum-free liquid-metal-printed 2D indium–tin oxide thin-film transistor for oxide inverters

Y Tang, CH Huang, K Nomura - ACS nano, 2022 - ACS Publications
A cost-effective, vacuum-free, liquid-metal-printed two-dimensional (2D)(∼ 1.9 nm-thick) tin-
doped indium oxide (ITO) thin-film transistor (TFT) was developed at the maximum process …

Recent progress of oxide-TFT-based inverter technology

K Nomura - Journal of Information Display, 2021 - Taylor & Francis
Oxide semiconductor-based thin-film transistor (oxide-TFT) technology have gained
significant attention since the innovation of n-channel oxide-TFT using ZnO and amorphous …

Liquid Ga–In–Sn alloy printing of GaInSnO ultrathin semiconductor films and controllable performance field effect transistors

B Du, Q Li, X Meng, J Liu - ACS Applied Electronic Materials, 2023 - ACS Publications
Wide band gap semiconductor Ga2O3 is a high potential material for fabricating next-
generation power electronics. However, the low conductivity and carrier mobility of Ga2O3 …

2‐nm‐Thick Indium Oxide Featuring High Mobility

CK Nguyen, A Mazumder, ELH Mayes… - Advanced Materials …, 2023 - Wiley Online Library
Thin film transistors (TFTs) are key components for the fabrication of electronic and
optoelectronic devices, resulting in a push for the wider exploration of semiconducting …

Reconfigurable Artificial Synapses with Excitatory and Inhibitory Response Enabled by an Ambipolar Oxide Thin-Film Transistor

CH Huang, Y Zhang, K Nomura - ACS Applied Materials & …, 2022 - ACS Publications
A gate-tunable synaptic device controlling dynamically reconfigurable excitatory and
inhibitory synaptic responses, which can emulate the fundamental synaptic responses for …

Copper iodide and oxide semiconductor thin films patterned by spray-spin coating for fabricating complementary inverters: Improving stability with passivation layers

K Lee, JG Oh, D Kim, J Baek, IH Kim, S Nam… - Applied Surface …, 2023 - Elsevier
Recently, copper iodide (CuI) has been studied as a solution-processed p-type
semiconductor owing to its high hole mobility and low-temperature processability. With the …

How to print high-mobility metal oxide transistors—Recent advances in ink design, processing, and device engineering

WJ Scheideler, V Subramanian - Applied Physics Letters, 2022 - pubs.aip.org
High-throughput printing-based fabrication has emerged as a key enabler of flexible
electronics given its unique capability for low-cost integration of circuits based on printed …

High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction

X Zhuang, JS Kim, W Huang, Y Chen… - Proceedings of the …, 2023 - National Acad Sciences
Cost-effective fabrication of mechanically flexible low-power electronics is important for
emerging applications including wearable electronics, artificial intelligence, and the Internet …