InAs quantum dots grown on relaxed, metamorphic InGaAs buffers are an important
heterostructure for the realization of devices based on GaAs substrates. In these last 20 …

The authors report on low-density InAs quantum dots (QDs) grown on AlGaInAs surfaces
lattice matched to InP using post-growth annealing by solid-source molecular beam epitaxy …

Low-density InAs quantum dots (QDs) with a large lateral size were grown on InP (001) by
solid-source molecular beam epitaxy with a post-growth annealing process. A decrease in …

We demonstrate the two-step formation of Ga droplets, which consists of the first formation at
a high temperature followed by the second formation at a low temperature. The first droplets …

We report on the ability to grow InAs quantum dots into patterns of any shape. We
specifically demonstrate the spatial localization of InAs quantum dots on mesa and trench …

The authors report the formation of low density InAs/InGaAsP/InP (100) quantum dots (QDs)
by metalorganic vapor phase epitaxy enabled by an ultrathin GaAs interlayer. For small InAs …

We have developed a growth process that leads to the direct formation of self-assembled
InAs quantum dots on InP (001) by solid-source molecular beam epitaxy avoiding the …

Scanning tunneling microscopy has been used to study the deposition by molecular-beam
epitaxy of thin InAs films on InP (001) substrates and compared with InAs growth on GaAs …

This letter studies and differentiates the influence of both InAs growth rate and cap-layer
growth rate on the density of capped In As∕ In P (001) quantum dots (QDs) grown by metal …

We propose a method to investigate the carrier transport properties in the ultrathin wetting
layer of a self-assembled quantum dot (QD) structure using low-voltage …