Atomic layer deposition of oxide semiconductor thin films for transistor applications: a review

I Hwang, M Choe, D Jeon, IH Baek - Journal of Materials Chemistry C, 2024 - pubs.rsc.org
The accelerated evolution of artificial intelligence (AI) and semiconductor technologies has
fostered a mutually reinforcing relationship, whereby each technology has contributed to the …

Highly C‐axis Aligned ALD‐InGaO Channel Improving Mobility and Thermal Stability for Next‐Generation 3D Memory Devices

SH Ryu, HM Kim, DG Kim… - Advanced Electronic …, 2024 - Wiley Online Library
A way to obtain highly ordered and thermally stable crystalline In–Ga–O (IGO) thin films is
reported by atomic layer deposition with novel bulky dimethyl [N‐(tert‐butyl)− 2‐methoxy‐2 …

Back-end-of-line-compatible scaled InGaZnO transistors by atomic layer deposition

J Zhang, Z Lin, Z Zhang, K Xu, H Dou… - … on Electron Devices, 2023 - ieeexplore.ieee.org
In this work, we report on back-end-of-line (BEOL)-compatible InGaZnO indium gallium zinc
oxide (IGZO) thin film transistors (TFTs) with extreme scaled device dimension including …

Influence of indium doping on electrical performance of gallium oxide thin-film transistors

L Ji, X Chen, X Su, J Wan, Z Tu, H Wu, C Liu - Applied Physics Letters, 2023 - pubs.aip.org
In the field of oxide semiconductor thin-film transistors (TFTs), the occurrence of charge
trapping in the gate dielectric and interfaces presents significant challenges to their …

Continuous Tunable Energy Band Tailoring Boosts Extending the Sensing of the Waveband Based on (InxGa1–x)2O3 Solar-Blind Photodetectors

Z Xi, Z Liu, S Yan, M Liu, JH Zhang, X Guo… - The Journal of …, 2024 - ACS Publications
Rising wide bandgap semiconductor gallium oxide (Ga2O3) displays huge potential in
performing solar-blind photodetection, with constraint in narrow detection wavebands in …

Universal PBTI Relaxation on the Negative VTH Shift in Oxide Semiconductor Transistors and New Insights

Z Lin, J Zhao, X Li, L Kang, J Li, Y Wu… - IEEE Electron Device …, 2023 - ieeexplore.ieee.org
In this work, the positive bias temperature instability (PBTI) degradation of ZnO transistors by
atomic layer deposition (ALD) is systematically investigated by using an extended measure …

Electrostatic damage influenced by bottom gate-like effects in flexible organic light-emitting diodes

Z Xiong, J Gu, D Xiang - IEEE Electron Device Letters, 2023 - ieeexplore.ieee.org
Electrostatic damage has been shown to be a common phenomenon in display applications
especially in flexible organic light-emitting diodes (OLEDs). Herein, to analyze the damage …

Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination

J Li, S Ju, Y Tang, J Li, X Li, X Tian… - Advanced Functional …, 2024 - Wiley Online Library
A low‐thermal‐budget fabrication approach is developed to realize high‐performance
fluorine‐doped indium oxide (In2O3: F) thin‐film transistors (TFTs) with remarkable bias …

Highly stable short channel ultrathin atomic layer deposited indium zinc oxide thin film transistors with excellent electrical characteristics

YK Liang, WL Li, JY Zheng, YL Lin… - IEEE Electron …, 2023 - ieeexplore.ieee.org
The high-performance atomic layer deposited (ALD) ultrathin (~ 2 nm) amorphous InZnO (-
IZO, indium: Zinc≈ 6: 4) channel thin-film transistors (TFTs) with a short channel length () of …

Ultrathin In2O3 thin-film transistors deposited from trimethylindium and ozone

J Zhu, J Li, S Ju, L Lu, S Zhang, X Wang - Nanotechnology, 2024 - iopscience.iop.org
Abstract Indium oxide (In 2 O 3) is a promising channel material for thin-film transistors
(TFTs). In this work, we develop an atomic layer deposition (ALD) process of using …