Feedback FET logic: a robust, high-speed low-power GaAs logic family
DE Fulkerson - IEEE journal of solid-state circuits, 1991 - ieeexplore.ieee.org
Feedback FET logic (FFL) with a special output stage that enables it to drive high on-chip
capacitances with low power is discussed. FFL is robust in the face of process and …
capacitances with low power is discussed. FFL is robust in the face of process and …
Gate current in self-aligned n-channel and p-channel pseudomorphic heterostructure field-effect transistors
FL Schuermeyer, M Shur… - IEEE Electron Device …, 1991 - ieeexplore.ieee.org
A report is presented on the results of the study of the gate leakage current in n-channel and
p-channel self-aligned pseudomorphic HIGFETs. The authors demonstrate that in these …
p-channel self-aligned pseudomorphic HIGFETs. The authors demonstrate that in these …
A 6.5-ns GaAs 20* 20-b parallel multiplier with 67-ps gate delay
HP Singh, RA Burrier, RA Sadler - IEEE journal of solid-state …, 1990 - ieeexplore.ieee.org
The performance and yield of LSI circuits have been characterized over a wide variation in
processing parameters and power supply voltage, and over the military temperature range …
processing parameters and power supply voltage, and over the military temperature range …
Subnanosecond 32 bit multiplier using negative differential resistance devices
S Mohan, P Mazumder, GI Haddad - Electronics Letters, 1991 - IET
Negative differential resistance devices such as resonant tunnelling transistors have been
used to design bistable logic circuits. A subnanosecond pipelined multiplier has been …
used to design bistable logic circuits. A subnanosecond pipelined multiplier has been …
Subthreshold and above threshold gate current in heterostructure insulated gate field-effect transistors
F Schuermeyer, E Martinez, M Shur, D Grider… - Electronics Letters, 1992 - IET
Experimental data are presented which show that the gate current at zero drain bias in
HIGFETs changes qualitatively when the gate voltage is varied from below to above …
HIGFETs changes qualitatively when the gate voltage is varied from below to above …
Optical digital matrix-vector processor using collinear guided-wave acoustooptic interaction
N Goto, Y Miyazaki - IEEE Symposium on Ultrasonics, 1990 - ieeexplore.ieee.org
An integrated-optic matrix-vector multiplier using collinear acoustooptic (AO) interaction is
discussed. The processor performance in analog and digital representations is clarified. The …
discussed. The processor performance in analog and digital representations is clarified. The …
GaAs VLSI technology and circuit elements for DSP
JM Mikkelson - … and Digital Gallium Arsenide Technologies for …, 1990 - spiedigitallibrary.org
Recent progress in digital GaAs circuit performance and complexity is presented to
demonstrate the current capabilities of GaAs components. High density GaAs process …
demonstrate the current capabilities of GaAs components. High density GaAs process …