The wet etching of GaN, AlN, and SiC is reviewed including conventional etching in
aqueous solutions, electrochemical etching in electrolytes and defect-selective chemical …

The third-generation semiconductors have richer and better properties than traditional
semiconductors, and show promising application prospects in high-power, high …

With the increasing requirements for microelectromechanical systems (MEMS) regarding
stability, miniaturization and integration, novel materials such as wide band gap …

Single-crystalline silicon nanomembranes (Si NMs) represent a critically important class of
material for high-performance forms of electronics that are capable of complete, controlled …

The invention provides transient devices, including active and passive devices that
electrically and/or physically transform upon application of at least one internal and/or …

This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …

We have demonstrated a method of producing nanoplatelets or complex well-ordered
nanostructures from silicon carbide (SiC) whiskers. Preferential etching of SiC whiskers in a …

A study of the electrochemistry of n-type GaN in an alkaline peroxydisulfate solution was
used to explain the mechanism of photoetching of the semiconductor under open-circuit …

A recently developed photoetching system for n-type GaN, a KOH solution containing the
strong oxidizing agent potassium peroxydisulphate (K2S2O8), was studied in detail. By …

Electrodeless photo-assisted electrochemical etching was successfully demonstrated using
a H 3 PO 4-based solution containing S 2 O 8 2–ions. The pH value of the solution changed …