[HTML][HTML] Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

AC Ferrari, F Bonaccorso, V Fal'Ko, KS Novoselov… - Nanoscale, 2015 - pubs.rsc.org
We present the science and technology roadmap for graphene, related two-dimensional
crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts …

[HTML][HTML] Production and processing of graphene and 2d crystals

F Bonaccorso, A Lombardo, T Hasan, Z Sun… - Materials today, 2012 - Elsevier
Graphene is at the center of an ever growing research effort due to its unique properties,
interesting for both fundamental science and applications. A key requirement for …

Graphene synthesis: relationship to applications

RS Edwards, KS Coleman - Nanoscale, 2013 - pubs.rsc.org
Graphene is a true wonder material that promises much in a variety of applications that
include electronic devices, supercapacitors, batteries, composites, flexible transparent …

Graphene growth on silicon carbide: A review

N Mishra, J Boeckl, N Motta, F Iacopi - physica status solidi (a), 2016 - Wiley Online Library
Graphene has been widely heralded over the last decade as one of the most promising
nanomaterials for integrated, miniaturized applications spanning from nanoelectronics …

[HTML][HTML] Synthesis and applications of carbon nanomaterials for energy generation and storage

M Notarianni, J Liu, K Vernon… - Beilstein Journal of …, 2016 - beilstein-journals.org
The world is facing an energy crisis due to exponential population growth and limited
availability of fossil fuels. Over the last 20 years, carbon, one of the most abundant materials …

Evidence for flat bands near the Fermi level in epitaxial rhombohedral multilayer graphene

D Pierucci, H Sediri, M Hajlaoui, JC Girard, T Brumme… - ACS …, 2015 - ACS Publications
The stacking order of multilayer graphene has a profound influence on its electronic
properties. In particular, it has been predicted that a rhombohedral stacking sequence …

High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum

N Zebardastan, J Bradford, J Lipton-Duffin… - …, 2022 - iopscience.iop.org
Epitaxial graphene on SiC is the most promising substrate for the next generation 2D
electronics, due to the possibility to fabricate 2D heterostructures directly on it, opening the …

Large area quasi-free standing monolayer graphene on 3C-SiC (111)

C Coletti, KV Emtsev, AA Zakharov, T Ouisse… - Applied Physics …, 2011 - pubs.aip.org
Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic
silicon carbide, ie, the 3C-SiC (111) surface, which represents an appealing and cost …

Enabling graphene-based technologies: Toward wafer-scale production of epitaxial graphene

LO Nyakiti, VD Wheeler, NY Garces, RL Myers-Ward… - Mrs Bulletin, 2012 - cambridge.org
Epitaxial graphene (EG) has attracted considerable interest because of its extraordinary
properties and ability to be synthesized on the wafer scale. These attributes have enabled …

Structural coherency of epitaxial graphene on 3C–SiC (111) epilayers on Si (111)

A Ouerghi, R Belkhou, M Marangolo, MG Silly… - Applied physics …, 2010 - pubs.aip.org
Graphene has emerged as a promising nanoelectronic material in electronic devices
applications and studying two-dimensional electron gases with relativistic dispersion near …