A comprehensive study of displacement damage and total ionisation dose effects on 4H‐
silicon carbide power devices is presented. Power diodes and transistors produced by …

Radiation damage produced in 4H‐SiC n‐epilayers by electrons of different energies is
presented. Junction barrier Schottky power SiC diodes are irradiated with 1.05, 2.1, 5, and …

Silicon carbide (SiC) power devices are becoming central components in high voltage
electronics. However, defects at interfaces and in the bulk continue to severely impact their …

The different effect of displacement damage produced by neutron irradiation on the static
characteristics of 4.5-kV silicon and 4H silicon carbide (SiC) pin power diodes is explained …

Radiation resistance of state‐of‐the‐art commercial wide‐bandgap power transistors, 1700
V 4H‐SiC power MOSFETs and 200 V GaN HEMTs, to the total ionization dose was …

Application of radiation defects for lifetime control in contemporary SiC PiN diodes was
investigated using the calibrated device simulator ATLAS from Silvaco, Inc. Recombination …

In this review, the application of light ion irradiation is discussed for tailoring novel functional
materials and for improving the performance in SiC or Si based electrical power devices …

We report the results of a study into the impact of irradiation with 0.9 MeV electrons on the
main properties of 4H-SiC MOSFETs of 1.2 kV class at irradiation doses Φ within the range …

The electrical properties, defects and conductivity recombination mechanism of electron and
ion irradiations were investigated in n-type 4H-SiC Schottky diodes. The incident particles …

Local lifetime reduction by proton irradiation was used to optimize the static and dynamic
parameters of a 10 kV SiC pin diode. Carrier lifetime was reduced locally at the anode side …