[图书][B] Radiation effects in advanced semiconductor materials and devices
C Claeys, E Simoen - 2013 - books.google.com
In the modern semiconductor industry, there is a growing need to understand and combat
potential radiation damage problems. Space applications are an obvious case, but, beyond …
potential radiation damage problems. Space applications are an obvious case, but, beyond …
Boosting the total ionizing dose tolerance of digital switches by using OCTO SOI MOSFET
LN de Souza Fino, ED Neto… - Semiconductor …, 2015 - iopscience.iop.org
This paper performs an experimental comparative study of the total ionizing dose effects due
to the x-ray radiation between the silicon-on-insulator (SOI) metal-oxide semiconductor field …
to the x-ray radiation between the silicon-on-insulator (SOI) metal-oxide semiconductor field …
Radiation hardening by the modification of shallow trench isolation process in partially depleted SOI MOSFETs
C Peng, Z Hu, Y En, Y Chen, Z Lei… - … on Nuclear Science, 2018 - ieeexplore.ieee.org
Two radiation hardening processes for shallow trench isolation (STI), ie, Si+ implantation
and STI oxide nitridation are investigated, including the impact on nominal electrical …
and STI oxide nitridation are investigated, including the impact on nominal electrical …
Temperature and electric field characteristics of time-dependent dielectric breakdown for silicon dioxide and reoxidized-nitrided oxides
CH Lin, J Cable, CS Woo - IEEE transactions on electron …, 1995 - ieeexplore.ieee.org
TDDB characteristics of 150/spl Aring/reoxidized nitrided oxide (ONO) gate dielectrics were
examined at temperatures from 77 K to 400 K. These ONO films were processed with …
examined at temperatures from 77 K to 400 K. These ONO films were processed with …
Radiation hardening by applying substrate bias
Z Hu, Z Liu, H Shao, Z Zhang, B Ning… - … on Nuclear Science, 2011 - ieeexplore.ieee.org
A reverse substrate bias is known to increase the threshold voltage and reduce the off-state
leakage current, which is of great interest from a radiation perspective in space applications …
leakage current, which is of great interest from a radiation perspective in space applications …
Boosting the radiation hardness and higher reestablishing pre-rad conditions by using OCTO layout style for MOSFETs
LN de Souza Fino, MAG da Silveira… - … 29th Symposium on …, 2014 - ieeexplore.ieee.org
This manuscript has the objective to perform an experimental comparative analysis of the
total ionizing dose influence in the Silicon-On-Insulator Metal-Oxide-Semiconductor Field …
total ionizing dose influence in the Silicon-On-Insulator Metal-Oxide-Semiconductor Field …
The influence of back gate bias on the OCTO SOI MOSFET's response to X-ray radiation
LNS Fino, MA Guazzelli, C Renaux, D Flandre… - Journal of Integrated …, 2015 - jics.org.br
This work investigates the X-ray irradiation impact on the performance of an on-conventional
transistor called OCTO SOI MOSFET that adopts an octagonal gate shape instead of a …
transistor called OCTO SOI MOSFET that adopts an octagonal gate shape instead of a …
[PDF][PDF] Efeitos das radiações ionizantes de raios-X no SOI nMOSFET com geometria de porta octogonal
LNS Fino - 2017 - repositorio.fei.edu.br
This work explores the analog and digital applications of unconventional layouts for Metal-
Oxide-Semiconductor Field Effect Transistors (MOSFETs) manufactured in Silicon-On …
Oxide-Semiconductor Field Effect Transistors (MOSFETs) manufactured in Silicon-On …
Influences of silicon-rich shallow trench isolation on total ionizing dose hardening and gate oxide integrity in a 130 nm partially depleted SOI CMOS technology
L Song, Z Hu, M Zhang, X Liu, L Dai, Z Zhang… - Microelectronics …, 2017 - Elsevier
The influences of silicon-rich shallow trench isolation (STI) on total ionizing dose (TID)
hardening and gate oxide integrity (GOI) in a 130 nm partially depleted silicon-on-insulator …
hardening and gate oxide integrity (GOI) in a 130 nm partially depleted silicon-on-insulator …
Electron trapping during irradiation in reoxidized nitrided oxide
A Mallik, J Vasi, AN Chandorkar - IEEE transactions on nuclear …, 1993 - ieeexplore.ieee.org
Isochronal detrapping experiments have been performed following irradiation under
different gate biases in reoxidized nitrided oxide (RNO) MOS capacitors. These show …
different gate biases in reoxidized nitrided oxide (RNO) MOS capacitors. These show …