Abstract 4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐
frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local …

Advances in siliconcarbide microfabrication and growth process optimization for
siliconcarbide nanostructures are ushering in new opportunities for microdevices capable of …

Silicon carbide (SiC) is a promising material for use in high-performance power electronic
devices. However, the SiC wafer is costly partly due to difficulties in machining the SiC …

Single-crystal SiC is a typical third-generation semiconductor power-device material
because of its excellent electronic and thermal properties. An ultrasmooth surface with …

This paper proposes a slurryless, highly efficient polishing method called ultrasonic vibration
assisted electrochemical mechanical polishing (UAECMP) to realize 4H–SiC wafers with …

A novel electrochemical shear-thickening polishing (ESTP) technique was proposed and
successfully applied to polish a 4H-SiC (000-1) workpiece. An in-depth investigation of the …

Electro-chemical mechanical polishing (ECMP), which combines anodic oxidation and soft
abrasive polishing, was applied to single-crystal SiC. Ceria (CeO 2) slurry was used as an …

A new abrasive-free planarization method for silicon carbide (SiC) wafers was proposed
using the catalytic nature of platinum (Pt). We named it catalyst-referred etching (CARE). The …

A novel method for electrochemical mechanical polishing (ECMP) of the single-crystalline
SiC surface, which has extremely high mechanical and chemical strength compared to …

Slurryless electrochemical mechanical polishing (ECMP) was proposed and directly applied
to sliced 4H–SiC (0001) surfaces. After ECMP for 2 h at a current density of 10 mA/cm 2 in …