30-W/mm GaN HEMTs by field plate optimization
GaN high-electron-mobility-transistors (HEMTs) on SiC were fabricated with field plates of
various dimensions for optimum performance. Great enhancement in radio frequency (RF) …
various dimensions for optimum performance. Great enhancement in radio frequency (RF) …
Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation
A design methodology of ferroelectric (FE) negative capacitance FETs (NCFETs) based on
the concept of capacitance matching is presented. A new mode of NCFET operation, called …
the concept of capacitance matching is presented. A new mode of NCFET operation, called …
Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films
In this letter we demonstrate that the anomalously low (002) x‐ray rocking curve widths for
epitaxial hexagonal GaN films on (001) sapphire are a result of a specific threading …
epitaxial hexagonal GaN films on (001) sapphire are a result of a specific threading …
Type‐II quantum‐well lasers for the mid‐wavelength infrared
JR Meyer, CA Hoffman, FJ Bartoli… - Applied physics …, 1995 - pubs.aip.org
We discuss an improved mid-wave infrared diode laser structure based on InAs-Ga1xInxSb-
InAs-Ga1xAlxSb Type-II multiple quantum wells. The proposed design combines strong …
InAs-Ga1xAlxSb Type-II multiple quantum wells. The proposed design combines strong …
High power mid‐infrared (λ∼ 5 μm) quantum cascade lasers operating above room temperature
The high power operation of mid-infrared quantum cascade lasers at temperatures up to T
320 K is reported. Gain at high temperature is optimized by a design combining low doping …
320 K is reported. Gain at high temperature is optimized by a design combining low doping …
Microhollow cathode discharges
KH Schoenbach, R Verhappen, T Tessnow… - Applied Physics …, 1996 - pubs.aip.org
The current–voltage characteristics of hollow cathode discharges and their predischarges in
argon under dc and pulsed conditions were found to have a positive slope at pressures up …
argon under dc and pulsed conditions were found to have a positive slope at pressures up …
Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n‐GaN
S Ruvimov, Z Liliental‐Weber, J Washburn… - Applied Physics …, 1996 - pubs.aip.org
Transmission electron microscopy has been applied to characterize the structure of Ti/Al and
Ti/Al/Ni/Au Ohmic contacts on n-type GaN (1017 cm 3) epitaxial layers. The metals were …
Ti/Al/Ni/Au Ohmic contacts on n-type GaN (1017 cm 3) epitaxial layers. The metals were …
Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
We report record high breakdown voltages up to 340 and 230 V realized on unintentionally
doped (1.5 μm gate length) and Si doped (1 μm gate length) AlGaN/GaN modulation doped …
doped (1.5 μm gate length) and Si doped (1 μm gate length) AlGaN/GaN modulation doped …
High barrier height gan schottky diodes: Pt/gan and pd/gan
L Wang, MI Nathan, TH Lim, MA Khan… - Applied Physics …, 1996 - pubs.aip.org
Platinum (Pt) and palladium (Pd) Schottky diodes on n‐type GaN grown by metalorganic
chemical vapor deposition were achieved and investigated. Aluminum was used for ohmic …
chemical vapor deposition were achieved and investigated. Aluminum was used for ohmic …
Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors
MA Khan, Q Chen, CJ Sun, JW Yang… - Applied physics …, 1996 - pubs.aip.org
We report on the fabrication and characterization of Al0. 1Ga0. 9N/GaN heterojunction field
effect transistors, both an enhancement mode and a depletion mode with a low pinchoff …
effect transistors, both an enhancement mode and a depletion mode with a low pinchoff …