In this paper, the current state of the art for large-scale InP photonic integrated circuits (PICs)
is reviewed with a focus on the devices and technologies that are driving the commercial …

The electrically pumped vertical-cavity surface-emitting laser (VCSEL) was first
demonstrated with metal cavities by Iga (1979); however, the device threshold current was …

The quantum-well (QW) heterojunction bipolar transistor (HBT) laser the transistor laser (TL),
inherently a fast switching device, operates by transporting small minority base charge …

The spontaneous emission recombination lifetime of carriers in the active region of transistor
lasers (TLs) is significantly reduced due to the accelerated carrier transport in the base …

Microwave extraction method of radiative recombination and photon lifetimes up to 85 C on 50
Gb/s oxide-vertical cavity surface emitting laser | Journal of Applied Physics | AIP Publishing Skip …

Developed from the authors' classroom-tested material, Semiconductor Laser Theory takes
a semiclassical approach to teaching the principles, structure, and applications of …

A single quantum well transistor laser (cavity length L= 300 μm) has been designed and
fabricated that operates with threshold I TH= 18 mA at 15 C and 14 mA at 0 C. Due to the …

Based on an earlier charge control analysis, we have constructed a microwave circuit model
of a three-port quantum-well (QW) transistor laser (TL) by extending Kirchhoff's law to …

Vertical microcavity surface-emitting lasers employing quantum wells and small aperture
buried-oxide current and field confinement are demonstrated with wider mode spacing and …

A comprehensive physical model that emphasizes carrier tunneling between quantum wells
(QWs) in the base of transistor lasers (TLs) is developed. This model relies on a set of …