[图书][B] Physics of semiconductors
M Grundmann - 2010 - Springer
Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …
have enabled economically reasonable fiber-based optical communication, optical storage …
Threshold voltage variation in SOI Schottky-barrier MOSFETs
The inhomogeneity of Schottky-barrier (SB) height B is found to strongly affect the threshold
voltage V_\rmth of SB-MOSFETs fabricated in ultrathin body silicon-on-insulator (SOI). The …
voltage V_\rmth of SB-MOSFETs fabricated in ultrathin body silicon-on-insulator (SOI). The …
The transition layer in TiB2-GaAs and Au-TiB2-GaAs Schottky contacts
EF Venger, RV Konakova, OB Okhrimenko, SY Sapko… - Semiconductors, 2001 - Springer
Spectral characteristics of the transverse bulk photovoltage in the TiB 2-GaAs and Au-TiB 2-
GaAs Schottky contacts for starting samples (unannealed) and samples annealed at 400 …
GaAs Schottky contacts for starting samples (unannealed) and samples annealed at 400 …
Analysis of inherent potential nonuniformities at the extrinsic-semiconductor surface
VB Bondarenko, MV Kuz'min, VV Korablev - Semiconductors, 2001 - Springer
The concept of an inherent dimensional effect in depleted semiconductor layers
(comparability of the characteristic scale of a depleted layer to an average distance between …
(comparability of the characteristic scale of a depleted layer to an average distance between …
Untersuchung der lokalen strukturellen und elektronischen Eigenschaften von Fe-GaAs Schottky-Kontakten mit atomar aufgelöster Raster-Tunnel-Mikroskopie in …
LH Winking - 2009 - ediss.uni-goettingen.de
Im Zentrum der vorliegenden Arbeit steht die Untersuchung des Zusammenspiels zwischen
den lokalen strukturellen Eigenschaften und den nanoskaligen elektronischen …
den lokalen strukturellen Eigenschaften und den nanoskaligen elektronischen …
The Continuum of Interface-Induced Gap States—The Unifying Concept of the Band Lineup at Semiconductor Interfaces—Application to Silicon Carbide
W Mönch - Silicon Carbide: Recent Major Advances, 2004 - Springer
In one of his pioneering articles, Schottky [1] described the many thorny roundabout routes
which finally ended in his Semiconductor Theory of the Blocking Layer [2] at metal …
which finally ended in his Semiconductor Theory of the Blocking Layer [2] at metal …
The Transition Layer in TiB [sub 2]–GaAs and Au–TiB [sub 2]–GaAs Schottky Contacts.
EF Venger, RV Konakova, OB Okhrimenko… - …, 2001 - search.ebscohost.com
Spectral characteristics of the transverse bulk photovoltage in the TiB [sub 2]-GaAs and Au-
TiB [sub 2]-GaAs Schottky contacts for starting samples (unannealed) and samples …
TiB [sub 2]-GaAs Schottky contacts for starting samples (unannealed) and samples …