Microwave processing has received significant attention based on the energy efficient
volumetric processing. The internal heat generation during the microwave heating …

Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are
excellent materials for the next generation of high-power and high-frequency electronic …

A high activation ratio of Mg ion implantation by conventional rapid thermal annealing (RTA)
was demonstrated. To obtain the high activation ratio of Mg ion implantation, the …

No reliable results were reported up-to-date on electrical activation of Mg implanted GaN
without co-doping with other ions. The main reason of the poor ion-implanted activation in …

P-type conversion of n−-GaN by Mg-ion implantation was successfully performed using high
quality GaN epitaxial layers grown on free-standing low-dislocation-density GaN substrates …

The structure of a number of GaN/AlGaN devices and their associated material growth and
processing issues are examined in some detail, and extrapolations are made to predict what …

Selectively activated p-type regions are necessary for many electronic devices that require
planar processing. The standard process of implanting p-type dopants, such as Mg, in GaN …

Selective p-type doping of Si-doped GaN by Mg ion implantation and multicycle rapid
thermal annealing (MRTA) is demonstrated. Samples of GaN were capped by AlN and …

Isochronal annealing was performed on Mg-ion-implanted GaN under 1 GPa N 2 ambient
pressure for 5 min at temperatures of 1573–1753 K. Secondary ion mass spectrometry …

Selective area doping in GaN, especially p-type, is a critical and inevitable building block for
the realization of advanced device structures for high-power applications, including, but not …