An analysis is made of the sputtering yields of materials for argon gas cluster ion beams
used in SIMS and XPS as a function of the beam energy, E, and the cluster size, n. The …

Exposure of ion bombarded solids to Cs gives rise to a very strong enhancement of the
yields of negatively charged secondary ions and, concurrently, to a lowering of positive ion …

Cluster ion beams have revolutionized the analysis of organic surfaces in time-of-flight
secondary ion mass spectrometry and opened up new capabilities for organic depth …

Argon cluster ion sources for sputtering and secondary ion mass spectrometry use
projectiles consisting of several hundreds of atoms, accelerated to 10–20 keV, and deposit …

We demonstrate the effectiveness of the combination of depth profile analyses based on soft
X-ray photoelectron spectroscopy (XPS) with Ar+ sputtering and time-of-flight secondary ion …

Matrix effects in the secondary ion mass spectrometry (SIMS) of selected elemental systems
have been analyzed to investigate the applicability of a mathematical description of the …

C60 n+ ions have been shown to be extremely successful for SIMS depth profiling of a wide
range of organic materials, causing significantly less degradation of the molecular …

Monoatomic ion sputtering is a common concept for surface sensitive analysis methods to
clean surfaces prior investigation or to obtain information from deeper regions. However …

A brief review is given of some of the behaviors of cluster primary ions in secondary ion
mass spectrometry (SIMS). The increased secondary ion yields for cluster primary ions are …

In secondary ion mass spectrometry (SIMS), the beneficial effect of cesium implantation or
flooding on the enhancement of negative secondary ion yields has been investigated in …