All-sputtered, flexible, bottom-gate IGZO/Al 2 O 3 bi-layer thin film transistors on PEN fabricated by a fully room temperature process
In this work, an innovative all-sputtered bottom-gate thin film transistor (TFT) using an
amorphous InGaZnO (IGZO)/Al2O3 bi-layer channel was fabricated by fully room …
amorphous InGaZnO (IGZO)/Al2O3 bi-layer channel was fabricated by fully room …
Al thin film: The effect of substrate type on Al film formation and morphology
H Khachatryan, SN Lee, KB Kim, HK Kim… - Journal of Physics and …, 2018 - Elsevier
In this work aluminium (Al) films were deposited on different substrates, and their phase,
microstructure and film growth process were tracked. Three types of substrates were …
microstructure and film growth process were tracked. Three types of substrates were …
[HTML][HTML] Suppression of oxygen vacancy defects in sALD-ZnO films annealed in different conditions
MJ Zhao, ZT Sun, ZX Zhang, XP Geng, WY Wu… - Materials, 2020 - mdpi.com
Zinc oxide (ZnO) has drawn much attention due to its excellent optical and electrical
properties. In this study, ZnO film was prepared by a high-deposition-rate spatial atomic …
properties. In this study, ZnO film was prepared by a high-deposition-rate spatial atomic …
[HTML][HTML] A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO2 Gate Insulator TFT with a High Concentration Precursor
Solution-processed high-k dielectric TFTs attract much attention since they cost relatively
little and have a simple fabrication process. However, it is still a challenge to reduce the …
little and have a simple fabrication process. However, it is still a challenge to reduce the …
High-performance spin-coated aluminum oxide dielectric fabricated by a simple oxygen plasma-treatment process
J Wei, Z Fang, J Peng, W Cai, Z Zhu… - Journal of Physics D …, 2018 - iopscience.iop.org
A simple oxygen (O 2) plasma-treatment process was utilized to achieve high performance
aluminum oxide (Al 2 O 3) dielectrics for thin film transistors (TFTs) through modulating the …
aluminum oxide (Al 2 O 3) dielectrics for thin film transistors (TFTs) through modulating the …
Fully Atomic Layer Deposition Induced InAlO Thin Film Transistors
X Ding, J Yang, J Li, J Zhang - Vacuum, 2024 - Elsevier
The atomic layer deposition (ALD) technique has been extensively utilized for depositing
metal oxide (MO) thin films, particularly as gate insulators in thin film transistors (TFTs) …
metal oxide (MO) thin films, particularly as gate insulators in thin film transistors (TFTs) …
Performances of thin film transistors with Ga-doped ZnO source and drain electrodes
In this paper, indium-gallium-zinc-oxide thin film transistors (TFTs) were successfully
fabricated by the pulsed laser deposition Ga-doped ZnO (GZO) films as source/drain (S/D) …
fabricated by the pulsed laser deposition Ga-doped ZnO (GZO) films as source/drain (S/D) …
Effect of oxygen pressure on GZO film as active layer of the TFT fabricated at room temperature
In this paper, bottom-gate inverted-staggered Ga doped ZnO (GZO) thin film transistors were
fabricated by pulsed laser deposition (PLD) at room temperature, and all of results …
fabricated by pulsed laser deposition (PLD) at room temperature, and all of results …
[HTML][HTML] Aluminum Thin Film Nanostructure Traces in Pediatric EEG Net for MRI and CT Artifact Reduction
H Jeong, G Ntolkeras, T Warbrick, M Jaschke, R Gupta… - Sensors, 2023 - mdpi.com
Magnetic resonance imaging (MRI) and continuous electroencephalogram (EEG)
monitoring are essential in the clinical management of neonatal seizures. EEG electrodes …
monitoring are essential in the clinical management of neonatal seizures. EEG electrodes …
[HTML][HTML] 纳米纸衬底的制备, 性能及其在柔性电子器件中的应用
陈港， 彭从星， 况宇迪， 曾勇， 朱朋辉， 姚日晖， 宁洪龙… - 材料工程, 2018 - html.rhhz.net
由纳米纤维素制备的纳米纸具有天然可降解, 质量轻, 柔性好, 透明度高, 强度高,
热稳定性好以及可卷对卷生产等优良特性, 被视为柔性电子器件衬底的理想材料之一. 近年来 …
热稳定性好以及可卷对卷生产等优良特性, 被视为柔性电子器件衬底的理想材料之一. 近年来 …