The insulated gate bipolar transistor (IGBT) is one of the most fragile components in power
electronics converters. In order to improve the reliability of IGBTs, various measurements are …

This letter proposes a simplified converter-level on-state voltage measurement circuit for
power semiconductor devices, without an external power supply and self-power circuit. It …

Insulated gate bipolar transistor (IGBT) junction temperature monitoring is crucial for
converter's healthy management and condition monitoring. However, most conventional …

Condition monitoring of insulated gate bipolar transistor (IGBT) modules is an effective way
to improve the transient performance and reliability of modular multilevel converters (MMC) …

Temperature sensitive electrical parameters (TSEP) provide an indirect and noninvasive
method for on-line junction temperature estimation of power semiconductor devices. It is …

The precise measurement of the on-state voltage of power devices working in real operating
conditions is the key for their characterization as well as health monitoring. This letter …

This article proposes a new method to separate the package-related wear-out failure
mechanisms of wire-bonded silicon-based power semiconductor switches: bond-wires lift-off …

Due to its acceptable sensitivity to aging, on-state voltage is one of the best degradation
indicators ever devised to monitor the condition of power semiconductors. The steep …

This article discloses part of an invention on plug-and-play converter-level on-state voltage
measurement methods for power semiconductor devices. To exclude the external power …

Introducing bond wire diagnosis for multichip insulated gate bipolar transistor (IGBT)
modules is key to the health monitoring of modular multilevel converters (MMCs), which …