Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …
expanding into other application areas including digital and quantum computing electronics …
Next generation electronics on the ultrawide-bandgap aluminum nitride platform
Gallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth
in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also …
in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also …
[HTML][HTML] Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures
Due to its high breakdown electric field, the ultra-wide bandgap semiconductor AlGaN has
garnered much attention recently as a promising channel material for next-generation high …
garnered much attention recently as a promising channel material for next-generation high …
N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates
Recent observation of high density polarization-induced two-dimensional electron gases in
ultra-thin N-polar GaN layers grown on single-crystal AlN has enabled the development of N …
ultra-thin N-polar GaN layers grown on single-crystal AlN has enabled the development of N …
Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future …
In this study, the influence of AlN barrier thickness (tb) on the RF & DC performances of 50
nm recessed T-gate Fe-doped AlN/GaN/SiC HEMT is investigated. The proposed HEMT …
nm recessed T-gate Fe-doped AlN/GaN/SiC HEMT is investigated. The proposed HEMT …
High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure
Benefitting from regrown Ohmic contact with a contact ledge structure, high performance
millimeter-wave InAlN/GaN HEMT is fabricated to satisfy low voltage RF applications …
millimeter-wave InAlN/GaN HEMT is fabricated to satisfy low voltage RF applications …
Nanometer-thick oxide semiconductor transistor with ultra-high drain current
High drive current is a critical performance parameter in semiconductor devices for high-
speed, low-power logic applications or high-efficiency, high-power, high-speed radio …
speed, low-power logic applications or high-efficiency, high-power, high-speed radio …
Physical insight of thin AlGaN back barrier for millimeter-wave high voltage AlN/GaN on SiC HEMTs
A Shanbhag, F Grandpierron, K Harrouche… - Applied Physics …, 2023 - pubs.aip.org
In this work, physical mechanisms underlying carbon-doped buffer combined with an AlGaN
back-barrier layer are investigated in state-of-the-art millimeter-wave AlN/GaN transistors …
back-barrier layer are investigated in state-of-the-art millimeter-wave AlN/GaN transistors …
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability
Application of gallium nitride high-electron-mobility transistors (GaN HEMTs) to millimeter-
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
[HTML][HTML] X-band epi-BAW resonators
Using epitaxial aluminum nitride (AlN) developed for ultraviolet photonics and high-speed
electronics, we demonstrate suspended AlN thin-film bulk acoustic resonators (FBARs) at …
electronics, we demonstrate suspended AlN thin-film bulk acoustic resonators (FBARs) at …