Nanometer‐scale electronic transport in engineered interfaces in ferroelectrics, such as
domains and topological defects, has emerged as a topic of broad interest due to potential …

Field induced domain wall displacements define ferroelectric/ferroelastic hysteresis loops,
which are at the core of piezoelectric, magnetoelectric and memristive devices. These …

We simulate field-induced nucleation and switching of domains in a three-dimensional
model of ferroelectrics with quenched disorder and varying domain sizes. We study (1) …

Jerky domain wall motion during merging of neighboring domains in lithium niobate single
crystals was studied in details by using synchronized in-situ optical visualization and …

Noise component of switching current has been recorded during polarization reversal by
domain wall motion in single-crystalline gadolinium molybdate (GMO) and lithium tantalate …

Copolymers based on vinylidene fluoride are potential materials for ferroelectric memory
elements. The trend in studies showing that a decrease in the degree of crystallinity can lead …

The field-induced jump-like dynamics of a single planar domain wall in single crystalline
uniaxial ferroelectric-ferroelastic Gd 2 (MoO 4) 3 and needle domains in the perovskite …

Piezoresponse force microscopy has been applied for the study of ferroelectric properties of
lithium niobate thin films. The films have been obtained on a silicon surface {110}, coated …

In this paper, we demonstrate how the experimentally observed nonmonotonic sideways
motion of the plane domain wall in uniaxial ferroelectric, caused by the electric circuit …

We present a Barkhausen pulse (BP) shape fitting method that allows extracting the domain
wall velocities during a given fast domain shape transformation after merging during …