Ion implantation is an important technique for a successful implementation of commercial
SiC devices. Much effort has also been devoted to optimising implantation and annealing …

We report an investigation of the electrical activation of aluminum implanted at high dose in
4H–SiC. We show that at reasonably high temperature implantation and annealing …

Aluminum and boron p-type low-dose implants have been characterized in 4H-and 6H-SiC
for anneals from 1300° C to 1600° C. In contrast to previous studies of heavily doped p-type …

4H-SiC wafers of orientations 0001 and (112 0) were implanted with 60 keV Al in different
major axial, planar, and low symmetry ''random''directions to ascertain the degree of …

Semiconductor devices include a silicon carbide drift region having an upper portion and a
lower portion. A first contact is on the upper portion of the drift region and a second contact is …

In this work we investigate the current–voltage characteristics of fabricated junction barrier
Schottky (JBS) rectifiers with different aluminium implantation profiles in their p-type grid …

Results Most commercial SiC devices are grown on 4º offcut substrates. One major concern
while trying to check the feasibility of channeling and implement it in mass-production is the …

Lateral undermask penetration of Al+ ions implanted in 4H-SiC is investigated by computer
simulation based on Monte Carlo binary collision approximation. Results show that a small …

Variable energy positron beam with Doppler broadening spectroscopy (DBS) was used to
investigate the depth-resolved defects formed by two fluencies of 130 keV N+ implanted in …

The study is intended to investigate the low energy nitrogen ion implantation induced
behavior and re-crystallization in semi-insulating 6H-SiC from surface to 5 µm, by Raman …