Over the last decades, continuous technological advancements have been made in III‐
nitride light‐emitting diodes (LEDs), so that they are considered as a promising replacement …

Abstract GaN/InGaN quantum wells (QWs), widely used as the active region in blue and
green light emitters, are susceptible to structural degradation at temperatures above 900° C …

We have demonstrated the role of thermal annealing treatment after InGaN quantum well
layer growth to improve the interface morphology and luminescence properties of …

Thermal degradation in blue InGaN multi-quantum well (MQW) structures induced by
varying high p-GaN growth temperature and the subsequent influence on the optical …

Thermal instability of In x Ga 1− x N quantum wells (QWs) is an obstacle to construct efficient
blue and green LEDs and laser diodes. Structural degradation of QWs with indium content …

The reduction in quantum efficiency observed in green-LEDs, often referred to as the “Green
Gap”, is primarily influenced by the fact that high indium compositional In x Ga 1− x N/GaN …

Various forms of thermal degradation of light emitters based on III-nitrides have been
observed, with no clear conclusion about the mechanism. We investigate the non-radiative …

The impact of Ge doping on InGaN layers grown with the Metal Organic Vapor Phase
Epitaxy technique is investigated, with the main focus on the influence of GeH 4 flow and …

A drop in the efficiency of light-emitting diodes based on InGaN/GaN QWs known as
the'green gap'has been studied intensively over the past dozen years. Several factors were …

The thermal conductivities κ of wurtzite In x Ga 1-x N are investigated using equilibrium
molecular dynamics (MD) method. The κ of In x Ga 1-x N rapidly declines from InN (κ InN …