Level shifter embedded in drive circuits with amorphous silicon TFTs

BS Bae, JW Choi, JH Oh, J Jang - IEEE transactions on electron …, 2006 - ieeexplore.ieee.org
A drive circuit embedded with a level shifter was fabricated with conventional a-Si: H thin-
film transistor (TFT) process. Two cascaded bootstrapped inverters were fabricated for the …

15.2: 2.0 inch a‐Si: H TFT‐LCD with Low Noise Integrated Gate Driver

JH Oh, JH Hur, YD Son, KM Kim, SH Kim… - … Symposium Digest of …, 2005 - Wiley Online Library
Abstract We developed a 2.0 inch, QCIF (160× 128× RGB), a‐Si: H TFT‐LCD with a low
noise gate driver integrated on glass substrate. By simulation and measurement, the …

High-resolution projection valve with amorphous silicon AMLCD technology

F Maurice, H Lebrun, N Szydlo, U Rossini… - Projection …, 1998 - spiedigitallibrary.org
Two kinds of LCD light valves are presently used in LCD projectors: HT poly valves, with an
aperture higher than 50 percent, but with limited size due to a specific high cost of the …

15.4: Invited Paper: Design of integrated Drivers with Amorphous Silicon TFTs for Small Displays. Basic Concepts

H Lebrun, T Kretz, J Magarino… - SID Symposium Digest of …, 2005 - Wiley Online Library
15.4: Invited Paper: Design of integrated Drivers with Amorphous Silicon TFTs for Small
Displays. Basic Concepts Page 1 15.4: Invited Paper: Design of integrated Drivers with …

Threshold‐voltage drift of amorphous‐silicon TFTs in integrated drivers for active‐matrix LCDs

H Lebrun, N Szydlo, E Bidal - Journal of the Society for …, 2003 - Wiley Online Library
The threshold‐voltage drift of a‐Si TFTs for AMLCD integrated drivers was studied. Analysis
of the drift shows two different kinetics. Both charges trapped in the insulator and defect …

P‐240L: Late‐News Poster: Advanced Design of a‐Si Gate Driver and Data Line Multiplexing for Low Cost and Low Power TFT‐LCDs

CC Kuo, CJ Shih, IC Shih, CY Hsu… - … Symposium Digest of …, 2008 - Wiley Online Library
The techniques of data line multiplexing with integrated gate driver circuits based on the
amorphous silicon TFT process are proposed and demonstrated. Our present scheme …

a-Si: H TFT Level Shifter with Reduced Number of Power

NH Jeong, YT Chun, JW Kim… - 한국정보디스플레이학회 …, 2008 - koreascience.kr
We proposed a-Si: H TFT (hydrogenated amorphous silicon thin film transistor) level shifter
which reduced number of power sources. To reduce the number of power sources from four …