Topological quantum devices: a review
The introduction of the concept of topology into condensed matter physics has greatly
deepened our fundamental understanding of transport properties of electrons as well as all …
deepened our fundamental understanding of transport properties of electrons as well as all …
Development of CMOS-compatible integrated silicon photonics devices
N Izhaky, MT Morse, S Koehl, O Cohen… - IEEE Journal of …, 2006 - ieeexplore.ieee.org
This paper surveys technical challenges involved in designing and manufacturing integrated
optoelectronic devices in a high-volume complementary metal-oxide-semiconductor …
optoelectronic devices in a high-volume complementary metal-oxide-semiconductor …
[图书][B] Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
JD Cressler, S Monfray, G Freeman, D Friedman… - 2018 - taylorfrancis.com
An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth
We report the demonstration of a germanium-tin (Ge_0. 9Sn_0. 1) multiple-quantum-well pin
photodiode on silicon (Si) substrate for 2 μm-wavelength light detection. Characterization of …
photodiode on silicon (Si) substrate for 2 μm-wavelength light detection. Characterization of …
Dark Current Analysis on GeSn pin Photodetectors
Group IV alloys of GeSn have been extensively investigated as a competing material
alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect …
alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect …
Germanium on silicon avalanche photodiode
M Huang, S Li, P Cai, G Hou, TI Su… - IEEE Journal of …, 2017 - ieeexplore.ieee.org
Silicon photonics is considered as one of the promising technologies for high-speed optical
fiber communications. Among various silicon photonic devices, germanium on silicon …
fiber communications. Among various silicon photonic devices, germanium on silicon …
High-responsivity GeSn short-wave infrared pin photodetectors
Surface-illuminated GeSn pin photodetectors (PDs) with Ge 0.964 Sn 0.036 active layer on
Ge substrate were fabricated. Photodetection up to 1.95 μm is achieved with a responsivity …
Ge substrate were fabricated. Photodetection up to 1.95 μm is achieved with a responsivity …
Suppression of dark current in germanium-tin on silicon pin photodiode by a silicon surface passivation technique
We demonstrate that a complementary metal-oxide-semiconductor (CMOS) compatible
silicon (Si) surface passivation technique effectively suppress the dark current originating …
silicon (Si) surface passivation technique effectively suppress the dark current originating …
Critical thickness for strain relaxation of Ge1− xSnx (x≤ 0.17) grown by molecular beam epitaxy on Ge (001)
We investigated the critical thickness (hc) for plastic relaxation of Ge 1− x Sn x grown by
molecular beam epitaxy. Ge 1− x Sn x films with various Sn mole fraction x (x≤ 0.17) and …
molecular beam epitaxy. Ge 1− x Sn x films with various Sn mole fraction x (x≤ 0.17) and …
Towards monolithic integration of germanium light sources on silicon chips
S Saito, AZ Al-Attili, K Oda… - … Science and Technology, 2016 - iopscience.iop.org
Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge
cannot emit light efficiently. However, the direct band gap energy is close to the indirect one …
cannot emit light efficiently. However, the direct band gap energy is close to the indirect one …