Back‐end CMOS compatible and flexible ferroelectric memories for neuromorphic computing and adaptive sensing

S Majumdar - Advanced Intelligent Systems, 2022 - Wiley Online Library
Development of unconventional computing architectures, including neuromorphic
computing, relies heavily on novel devices with properly engineered properties. This …

Low 3 volt operation of 2D MoTe2 ferroelectric memory transistors with ultrathin pinhole-free P (VDF-TrFE) crystalline film

HJ Lee, Y Cho, J Park, H Cho, H Han, C Park… - Materials Science and …, 2024 - Elsevier
Organic ferroelectric crystalline polymer, P (VDF-TrFE) has attracted broad attentions due to
its lead-free benefits and process convenience. However, it has a long-standing drawback …

Metal-free, single-polymer device exhibits resistive memory effect

US Bhansali, MA Khan, D Cha, MN AlMadhoun, R Li… - ACS …, 2013 - ACS Publications
All-polymer, write-once-read-many times resistive memory devices have been fabricated on
flexible substrates using a single polymer, poly (3, 4-ethylenedioxythiophene): polystyrene …

Characterization of piezoresistive PEDOT: PSS pressure sensors with inter-digitated and cross-point electrode structures

JC Wang, RS Karmakar, YJ Lu, CY Huang, KC Wei - Sensors, 2015 - mdpi.com
The piezoresistive characteristics of poly (3, 4-ethylenedioxythiophene): polystyrene
sulfonate (PEDOT: PSS) pressure sensors with inter-digitated (IDE) and cross-point …

Transparent antiradiative ferroelectric heterostructure based on flexible oxide heteroepitaxy

CH Ma, J Jiang, PW Shao, QX Peng… - … applied materials & …, 2018 - ACS Publications
In the era of Internet of Things, the demand for flexible and transparent electronic devices
has shifted to the forefront of materials science research. However, the radiation damage to …

High‐Performance Ferroelectric Memory Based on Phase‐Separated Films of Polymer Blends

MA Khan, US Bhansali, MN Almadhoun… - Advanced Functional …, 2014 - Wiley Online Library
High‐performance polymer memory is fabricated using blends of ferroelectric poly
(vinylidene‐fluoride‐trifluoroethylene)(P (VDF‐TrFE)) and highly insulating poly (p …

Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

JA Caraveo-Frescas, MA Khan, HN Alshareef - Scientific Reports, 2014 - nature.com
Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor
memory device with record mobility. The memory device, fabricated at 200° C on both plastic …

Stretchable ferroelectric field-effect-transistor with multi-level storage capacity and photo-modulated resistance

L Xiong, Y Chen, J Yu, W Xiong, X Zhang… - Applied Physics …, 2019 - pubs.aip.org
Implementing stretchable memory is the key toward an intelligent device possessing
wearability and implantability. In this work, we construct a stretchable ferroelectric field effect …

P (VDF-TrFE) polymer-based thin films deposited on stainless steel substrates treated using water dissociation for flexible tactile sensor development

HJ Tseng, WC Tian, WJ Wu - Sensors, 2013 - mdpi.com
In this work, deionized (DI) water dissociation was used to treat and change the contact
angle of the surface of stainless steel substrates followed by the spin coating of P (VDF …

Organic ferroelectric memory devices with inkjet-printed polymer electrodes on flexible substrates

US Bhansali, MA Khan, HN Alshareef - Microelectronic engineering, 2013 - Elsevier
Drop-on-demand piezoelectric inkjet-printing technique has been used to fabricate a
functional cross-bar array of all-organic ferroelectric memory devices. The polymer …