InAs/InP quantum dots are excellent sources of telecom single-photon emission and are among the most promising candidates for scalable quantum photonic circuits. However …
We develop a simple quantum-mechanical theory of interband absorption by semiconductor nanocrystals exposed to a dc electric field. The theory is based on the model of …
NV Tepliakov, IO Ponomareva… - The Journal of …, 2016 - ACS Publications
We theoretically study the broadening of optical absorption spectra of monodisperse ensembles of randomly oriented nanorods and nanoplatelets exposed to a static electric …
We study experimentally and theoretically the in-plane magnetic field dependence of the coupling between dots forming a vertically stacked double dot molecule. The InAsP …
AH Gharamaleki, S Kevin - Optical and Quantum Electronics, 2024 - Springer
The study examines the linear absorption and third-order nonlinear dispersion properties of a dielectric slab doped with asymmetric InAs/GaAs double-quantum-dot molecules …
S Xia, Z Wang, Y Ren, Z Gu, Y Wang - Applied Physics Letters, 2019 - pubs.aip.org
The electric field effect on the optical properties of semiconductors is important in terms of both fundamental physics and technological applications. Here, we explored the optical …
The biexciton absorption spectrum of a pair of InAs/GaAs quantum dots is being studied by photoluminescence excitation spectroscopy. An absorption resonance with the …
In this study, one band Schrödinger equation for InAs/GaAs quantum dots coupled to their wetting layer was solved numerically by using a finite element method (FEM). We have …
C Jennings, M Scheibner - Physical Review B, 2016 - APS
We theoretically model the electronic dynamics of a coupled quantum dot pair in a static electric field. We then investigate the possibility of polarization-entangled photon emission …