[HTML][HTML] Quantum dots: promises and accomplishments

D Bimberg, UW Pohl - Materials Today, 2011 - Elsevier
Exploration of the Stranski-Krastanow growth of strained semiconductor heterostructures
marked the major breakthrough for easy fabrication of defect-free quantum dots (QDs). For …

High-performance O-band quantum-dot semiconductor optical amplifiers directly grown on a CMOS compatible silicon substrate

S Liu, J Norman, M Dumont, D Jung, A Torres… - ACS …, 2019 - ACS Publications
High gain and high saturation output power silicon-based semiconductor optical amplifiers
(SOAs) are essential elements in future large-scale silicon photonic integrated circuits (PICs) …

Quantum coherence induces pulse shape modification in a semiconductor optical amplifier at room temperature

M Kolarczik, N Owschimikow, J Korn, B Lingnau… - Nature …, 2013 - nature.com
Coherence in light–matter interaction is a necessary ingredient if light is used to control the
quantum state of a material system. Coherent effects are firmly associated with isolated …

On the feasibility of ultrafast all-optical NAND gate using single quantum-dot semiconductor optical amplifier-based Mach–Zehnder interferometer

E Dimitriadou, KE Zoiros - Optics & Laser Technology, 2012 - Elsevier
The feasibility of implementing an all-optical NAND gate for 160Gb/s return-to-zero data
pulses using a single quantum-dot semiconductor optical amplifier (QD-SOA)-based Mach …

Ultrahigh-speed and widely tunable wavelength conversion based on cross-gain modulation in a quantum-dot semiconductor optical amplifier

M Matsuura, O Raz, F Gomez-Agis, N Calabretta… - Optics …, 2011 - opg.optica.org
We present ultrahigh-speed and full C-band tunable wavelength conversions using cross-
gain modulation in a quantum-dot semiconductor optical amplifier (QD-SOA). In this study …

[图书][B] Nonlinear and nonequilibrium dynamics of quantum-dot optoelectronic devices

B Lingnau - 2015 - books.google.com
This thesis sheds light on the unique dynamics of optoelectronic devices based on
semiconductor quantum-dots. The complex scattering processes involved in filling the …

[PDF][PDF] Modelling of electronic and optical properties of Cu2SnS3 quantum dots for optoelectronics applications

MI Ahamed, KS Kumar - Materials Science-Poland, 2019 - intapi.sciendo.com
Copper tin sulfide (Cu2SnS3) is a unique semiconductor, whose nanocrystals have attracted
researchers' attention for its tunable energy bandgap and wavelength in visible and near …

Four-wave mixing in quantum-dot semiconductor optical amplifiers: a detailed analysis of the nonlinear effects

M Zajnulina, B Lingnau, K Lüdge - IEEE Journal of Selected …, 2017 - ieeexplore.ieee.org
We introduce a self-consistent approach for the description of the nonlinear light
propagation in InAs/InGaAs quantum-dot semiconductor optical amplifiers and, using it …

Optoelectronic device

A Rickman, A Zilkie, G Yu, H Abediasl… - US Patent …, 2021 - Google Patents
An optoelectronic device and method of making the same. The device comprising: a
substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically …

Quantum-dot semiconductor optical amplifiers for energy-efficient optical communication

H Schmeckebier, D Bimberg - Green photonics and electronics, 2017 - Springer
Quantum-dot (QD) based semiconductor optical amplifiers (SOAs) are key components for a
large number of different applications in particular for all-optical communication networks …