GaAsBi: from molecular beam epitaxy growth to devices
RD Richards, NJ Bailey, Y Liu… - … status solidi (b), 2022 - Wiley Online Library
GaAsBi has been researched as a candidate material for optoelectronic devices for around
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …
One-pot synthesis of TiO2/graphene nanocomposites for excellent visible light photocatalysis based on chemical exfoliation method
Facile electron-hole recombination and the broad band gap are two major bottlenecks of
titanium dioxide (TiO 2) applied in visible-light photocatalysis. Hybridization of TiO 2 with …
titanium dioxide (TiO 2) applied in visible-light photocatalysis. Hybridization of TiO 2 with …
NiSe2/Ag3PO4 Nanocomposites for Enhanced Visible Light Photocatalysts for Environmental Remediation Applications
M Rani, M Murtaza, A Amjad, M Zahra, A Waseem… - Catalysts, 2023 - mdpi.com
This study investigated the use of NiSe2/Ag3PO4 nanocomposite catalysts for the
photocatalytic degradation of RhB and BPA pollutants. Samples of pure NiSe2, Ag3PO4 …
photocatalytic degradation of RhB and BPA pollutants. Samples of pure NiSe2, Ag3PO4 …
Progress toward III–V bismide alloys for near-and midinfrared laser diodes
IP Marko, SJ Sweeney - IEEE Journal of Selected Topics in …, 2017 - ieeexplore.ieee.org
Bismuth-containing III-V alloys open-up a range of possibilities for practical applications in
semiconductor lasers, photovoltaics, spintronics, photodiodes, and thermoelectrics. Of …
semiconductor lasers, photovoltaics, spintronics, photodiodes, and thermoelectrics. Of …
Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell
Multi-junction solar cells achieve high efficiency by stacking sub-cells of different bandgaps
(typically GaInP/GaAs/Ge) resulting in efficiencies in excess of 40%. The efficiency can be …
(typically GaInP/GaAs/Ge) resulting in efficiencies in excess of 40%. The efficiency can be …
Impact of temperature variation on noise parameters and HCI degradation of Recessed Source/Drain Junctionless Gate All Around MOSFETs
With the continuous scaling for MOS device, the noise parameters has becoming a critical
parameter. The noise performance of an electronic device can be measured with the help of …
parameter. The noise performance of an electronic device can be measured with the help of …
[HTML][HTML] Photovoltaic characterisation of GaAsBi/GaAs multiple quantum well devices
RD Richards, A Mellor, F Harun, JS Cheong… - Solar Energy Materials …, 2017 - Elsevier
A series of strained GaAsBi/GaAs multiple quantum well diodes are characterised to assess
the potential of GaAsBi for photovoltaic applications. The devices are compared with …
the potential of GaAsBi for photovoltaic applications. The devices are compared with …
Perovskite LaNiO3/Ag3PO4 heterojunction photocatalyst for the degradation of dyes
Pristine lanthanum nickelate (LaNiO3), silver phosphate (Ag3PO4) and perovskite
lanthanum nickelate silver phosphate composites (LaNiO3/Ag3PO4) were prepared using …
lanthanum nickelate silver phosphate composites (LaNiO3/Ag3PO4) were prepared using …
The influence of inhomogeneities and defects on novel quantum well and quantum dot based infrared-emitting semiconductor lasers
IP Marko, SJ Sweeney - Semiconductor Science and Technology, 2018 - iopscience.iop.org
In this paper we discuss the development of new semiconductor materials and approaches
to overcome the fundamental limitations of well established (Al, In) GaAs/InP and …
to overcome the fundamental limitations of well established (Al, In) GaAs/InP and …
Noise and linearity analysis of recessed-source/drain junctionless Gate All Around (Re-S/D-JL-GAA) MOSFETs for communication systems
Noise becomes a critical performance for any electronic component when it is being used for
communication systems, it makes MOSFETs less effective at performing their functions in a …
communication systems, it makes MOSFETs less effective at performing their functions in a …