Impact of strategic approaches for improving the device performance of mesa-shaped nanoscale vertical-channel thin-film transistors using atomic-layer deposited In …

HM Ahn, YH Kwon, NJ Seong, KJ Choi… - Electronic Materials …, 2022 - Springer
The effect of two strategic approaches, such as modification of active layer geometry and
control of active channel composition, were investigated to improve the on/off ratio …

Evolution of spatial light modulator for high‐definition digital holography

JH Choi, JE Pi, CY Hwang, JH Yang, YH Kim… - EtRI …, 2019 - Wiley Online Library
Since the late 20th century, there has been rapid development in the display industry. Only
30 years ago, we used big cathode ray tube displays with poor resolution, but now most …

Improvement in current drivability and stability in nanoscale vertical channel thin-film transistors via band-gap engineering in In–Ga–Zn–O bilayer channel …

HM Ahn, YH Kwon, NJ Seong, KJ Choi… - …, 2023 - iopscience.iop.org
Vertical channel thin film transistors (VTFTs) have been expected to be exploited as one of
the promising three-dimensional devices demanding a higher integration density owing to …

Submicron channel length high-performance metal oxide thin-film transistors

C Sung, S Nam, SH Cho - IEEE Electron Device Letters, 2021 - ieeexplore.ieee.org
In this work, we present a new fabrication methodology to enable high-performance thin-film
transistor (TFT) with submicron channel length. The method can exceed the resolution limit …

46‐2: Invited Paper: Ultimate Resolution Active Matrix Display with Oxide TFT Backplanes for Electronic Holographic Display

CS Hwang, YH Kim, JH Yang, JH Choi… - … Symposium Digest of …, 2018 - Wiley Online Library
Oxide TFT backplane with 1μm channel length was developed for the application to
electronic holographic display. Spatial light modulator (SLM) panel with 3μm pixel pitch was …

[HTML][HTML] Dry Etching Characteristics of InGaZnO Thin Films Under Inductively Coupled Plasma–Reactive-Ion Etching with Hydrochloride and Argon Gas Mixture

C Oh, MW Ju, H Jeong, JH Song, BS Kim, DG Lee… - Materials, 2024 - mdpi.com
Inductively coupled plasma–reactive etching (ICP-RIE) of InGaZnO (IGZO) thin films was
studied with variations in gas mixtures of hydrochloride (HCl) and argon (Ar). The dry …

Modulating Electrical Characteristics of ZnO Thin-Film Transistors by Scaling Down Gate Dielectric Thickness

S Li, S Zhu, L Liu, Z Zeng, S Chang… - … on Electron Devices, 2023 - ieeexplore.ieee.org
Modulating electrical characteristics of zinc oxide (ZnO) thin-film transistors (TFTs) through
gate dielectric thickness is expected to compensate for short-channel effects (SCEs) for …

Charge-trap-assisted flexible nonvolatile memory applications using oxide-semiconductor thin-film transistors

SM Yoon, JH Yang, HR Kim, HW Jang… - Japanese Journal of …, 2019 - iopscience.iop.org
We introduce mechanically flexible nonvolatile memory thin-film transistors (MTFTs) for
future highly functional flexible and stretchable electronic devices and systems. The …

Achieving 1um pixel pitch display for electronic holography

CS Hwang, YH Kim, JH Choi, JE Pi… - Advances in …, 2020 - spiedigitallibrary.org
Holographic display is known as the most realistic 3D display by creating real 3D image in
front of observer. But there are tremendous technical hurdles in realizing electronic …

High-resolution spatial light modulator on glass for digital holographic display

JH Yang, JH Choi, JE Pi, CY Hwang… - … Imaging Systems II, 2019 - spiedigitallibrary.org
A spatial light modulator (SLM) is the key component for a digital holographic display
system. It requires both ultrahigh-resolution fine pixel integration and large-area panel to get …