Integrated circuits (ICs) are challenged to deliver historically anticipated performance
improvements while increasing the cost and complexity of the technology with each …

Mo (001) and Mo (011) layers with thickness d= 4–400 nm are sputter-deposited onto MgO
(001) and α-Al2O3 (11 2¯ 0) substrates and their resistivity is measured in situ and ex situ at …

Ruthenium and molybdenum are of great potential to replace copper for use as the next-
generation interconnect metallization. Important parameters including their intrinsic …

The resistivity size effect in the ordered intermetallic CuTi compound is quantified using in
situ and ex situ thin film resistivity ρ measurements at 295 and 77 K, and density functional …

High aspect ratio metal nanostructures are commonly found in a broad range of applications
such as electronic compute structures and sensing. The self‐heating and elevated …

Epitaxial CuAl 2 (001) layers with thickness= 10.2–141 nm are deposited by co-sputtering
onto MgO (001) substrates at 300° C and their resistivity is measured in situ to quantify the …

Epitaxial VNi 2 layers are deposited onto MgO (001) and their resistivity ρ measured as a
function of layer thickness d= 10.5–138 nm to quantify the resistivity size effect. The layers …

We apply first-principles simulations to evaluate several properties related to the resistance
and reliability of rhodium and iridium interconnects. We find that both Rh and Ir have …

The resistivity size effect in Rh is investigated by quantifying electron scattering at surfaces
and grain boundaries in polycrystalline Rh layers with thickness–261 nm. Sputter deposition …

Metastable face-centered cubic (fcc) Co layers are deposited by reactive magnetron
sputtering in 5 mTorr N 2 at 400 C followed by vacuum annealing at 500 C. The resulting …