Effects of Cu (In, Ga) 3Se5 defect phase layer in Cu (In, Ga) Se2 thin film solar cells
B Namnuan, V Amornkitbamrung… - Journal of Alloys and …, 2019 - Elsevier
Abstract Cu (In, Ga) 3 Se 5 (135-CIGS) layers with various thicknesses were deposited on
the surface of Cu (In, Ga) Se 2 (112-CIGS) photon absorber in the fabrication of CIGS thin …
the surface of Cu (In, Ga) Se 2 (112-CIGS) photon absorber in the fabrication of CIGS thin …
Ordered Vacancy Compound Formation by Controlling Element Redistribution in Molecular-Level Precursor Solution Processed CuInSe2 Thin Films
It has been reported that the formation of a thin layer of ordered vacancy compound (OVC)
on a chalcopyrite absorber layer would provide a high quality p− n junction owing to …
on a chalcopyrite absorber layer would provide a high quality p− n junction owing to …
Reduction of point defects and Cu surface composition in Cu (In, Ga) Se2 film by Se annealing with a NaF overlayer at intermediate temperatures
S Kim, YM Ko, ST Kim, YW Choi, JK Park… - Current Applied Physics, 2017 - Elsevier
Donor-type point defects such as a Se vacancy or cation antisite in Cu (In, Ga) Se 2 (CIGS)
films were controlled by Se annealing of CIGS film. The photoluminescence intensities …
films were controlled by Se annealing of CIGS film. The photoluminescence intensities …
[图书][B] Optimization of the Absorber/Buffer Interface Region of Cu (In, Ga) Se2 Photovoltaic Devices: A Numerical Simulation Study
Y Patikirige - 2019 - search.proquest.com
Solar cells based on the compound Copper Indium Gallium Diselenide, Cu (In x Ga 1-x) Se
2,(or CIGS) are commercially important. The electronic properties of CIGS can be controlled …
2,(or CIGS) are commercially important. The electronic properties of CIGS can be controlled …
Effect of Cu (In, Ga)? Se? ultra-thin layer on optical properties and photovoltaic efficiency of Cu (In, Ga) Se? thin film solar cells
B Namnuan - 2018 - digital.car.chula.ac.th
Abstract Cu (In, Ga) 3Se5 (135-CIGS) layers with various thicknesses were deposited on the
surface of~ 1.8 micron thick Cu (In, Ga) Se2 (112-CIGS) photon absorber in the fabrication of …
surface of~ 1.8 micron thick Cu (In, Ga) Se2 (112-CIGS) photon absorber in the fabrication of …