A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …

JA Spencer, AL Mock, AG Jacobs, M Schubert… - Applied Physics …, 2022 - pubs.aip.org
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …

A strategic review on gallium oxide based deep‐ultraviolet photodetectors: recent progress and future prospects

D Kaur, M Kumar - Advanced optical materials, 2021 - Wiley Online Library
With the use of UV‐C radiation sterilizers on the rise in the wake of the recent pandemic, it
has become imperative to have health safety systems in place to curb the ill‐effects on …

Hyperbolic metamaterials: fusing artificial structures to natural 2D materials

D Lee, S So, G Hu, M Kim, T Badloe, H Cho, J Kim… - ELight, 2022 - Springer
Optical metamaterials have presented an innovative method of manipulating light.
Hyperbolic metamaterials have an extremely high anisotropy with a hyperbolic dispersion …

Real-space nanoimaging of hyperbolic shear polaritons in a monoclinic crystal

G Hu, W Ma, D Hu, J Wu, C Zheng, K Liu… - Nature …, 2023 - nature.com
Various optical crystals possess permittivity components of opposite signs along different
principal directions in the mid-infrared regime, exhibiting exotic anisotropic phonon …

[HTML][HTML] A review of Ga2O3 materials, processing, and devices

SJ Pearton, J Yang, PH Cary, F Ren, J Kim… - Applied Physics …, 2018 - pubs.aip.org
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …

Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

SJ Pearton, F Ren, M Tadjer, J Kim - Journal of Applied Physics, 2018 - pubs.aip.org
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …

Guest Editorial: The dawn of gallium oxide microelectronics

M Higashiwaki, GH Jessen - Applied Physics Letters, 2018 - pubs.aip.org
Among semiconductors, Si is the foundational technology against which all others are
compared. The bandgap is large enough to allow for the conductivity of the material to be …

β-Ga2O3 for wide-bandgap electronics and optoelectronics

Z Galazka - Semiconductor Science and Technology, 2018 - iopscience.iop.org
Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …

Hyperbolic shear polaritons in low-symmetry crystals

NC Passler, X Ni, G Hu, JR Matson, G Carini, M Wolf… - Nature, 2022 - nature.com
The lattice symmetry of a crystal is one of the most important factors in determining its
physical properties. Particularly, low-symmetry crystals offer powerful opportunities to control …

Progress in state-of-the-art technologies of Ga2O3 devices

C Wang, J Zhang, S Xu, C Zhang, Q Feng… - Journal of Physics D …, 2021 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3), an emerging ultra-wide-bandgap semiconductor, has the
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …