Design and Characterization of High CS-MCT for Pulse Power Applications
A high di/dt MOS-controlled thyristor with cathode-short structure (CS-MCT) is developed for
pulse power applications. Compared with conventional MCT (con-MCT), the cathode short …
pulse power applications. Compared with conventional MCT (con-MCT), the cathode short …
A compact, 10-kV, 2-ns risetime pulsed-power circuit based on off-the-shelf components
AS Kesar - IEEE Transactions on Plasma Science, 2018 - ieeexplore.ieee.org
The use of drift-step-recovery diodes (DSRDs) for producing high-voltage pulses in the
nanosecond range requires a prime switch. The prime switch pumps the DSRD with carriers …
nanosecond range requires a prime switch. The prime switch pumps the DSRD with carriers …
High peak current MOS gate-triggered thyristor with fast turn-on characteristics for solid-state closing switch applications
W Chen, C Liu, X Tang, L Lou, W Cheng… - IEEE Electron …, 2015 - ieeexplore.ieee.org
In this letter, a MOS gate-triggered thyristor (MGTT) structure with alternating MOS and pnpn
thyristor sections is proposed and fabricated with the state-of-the-art commercial insulated …
thyristor sections is proposed and fabricated with the state-of-the-art commercial insulated …
Low-Voltage Turn-On Characteristics of RSD for Muzzle Arc Extinguishing of Electromagnetic Guns
Z Qing, L Liang, L Han, X Huang… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
In this article, the low voltage turn-on characteristics of reversely switched dynistor (RSD) is
analyzed for the first time for the current transfer application to solve the problem of muzzle …
analyzed for the first time for the current transfer application to solve the problem of muzzle …
[HTML][HTML] HEART-50 重复频率高功率脉冲驱动源研究
李嵩， 杨汉武， 樊玉伟， 张自成， 高景明… - High Power Laser …, 2022 - opticsjournal.net
摘要通过理论计算, 数值仿真和实验验证的方法, 研究了一台峰值功率数十GW, 重复频率5 Hz
的重复频率高功率脉冲驱动源, 命名为“HEART-50”. 该脉冲驱动源由充电电源, 初级开关 …
的重复频率高功率脉冲驱动源, 命名为“HEART-50”. 该脉冲驱动源由充电电源, 初级开关 …
Investigation and comparison on switching performance of semiconductor pulsed power devices
C Chen, L Liang - IEEE Transactions on Plasma Science, 2015 - ieeexplore.ieee.org
Pulsed power semiconductor devices play a more and more important role in the field of
pulse power, with their high reliability and low switching losses. It includes common power …
pulse power, with their high reliability and low switching losses. It includes common power …
Design method of reversely switched dynistor based pulse circuit without magnetic switch
Y Pi, L Liang, X Yan - CSEE Journal of Power and Energy …, 2020 - ieeexplore.ieee.org
In the reversely switched dynistor (RSD)-based pulse power circuits, a magnetic switch is
usually necessary to be applied together with a main switch. It occupies space and needs a …
usually necessary to be applied together with a main switch. It occupies space and needs a …
Study on switching characteristics of reversely switched dynistor with an N-buffer layer
L Liang, C Liu, C Chen, H Wang… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
In this paper, an N-buffer layer has been introduced into the reversely switched dynistor
(RSD). The relationship between the buffer layer and the device characteristics, together …
(RSD). The relationship between the buffer layer and the device characteristics, together …
Positive-bevel edge termination for SiC reversely switched dynistor
L Liang, M Pan, L Zhang, Y Shu - Microelectronic Engineering, 2016 - Elsevier
The termination structure for the pulsed power switch SiC RSD (reversely switched dynistor)
is studied in this paper. According to the structure characteristics of SiC RSD, the positive …
is studied in this paper. According to the structure characteristics of SiC RSD, the positive …