Millimeter-wave power amplifier integrated circuits for high dynamic range signals

H Wang, PM Asbeck, C Fager - IEEE Journal of Microwaves, 2021 - ieeexplore.ieee.org
The next-generation 5G and beyond-5G wireless systems have stimulated a substantial
growth in research, development, and deployment of mm-Wave electronic systems and …

A wideband class-AB power amplifier with 29–57-GHz AM–PM compensation in 0.9-V 28-nm bulk CMOS

M Vigilante, P Reynaert - IEEE Journal of Solid-State Circuits, 2017 - ieeexplore.ieee.org
A wideband amplitude to phase (AM-PM) compensated class-AB power amplifier (PA)
suitable for highly integrated fifth-generation phased arrays is designed in 0.9-V 28-nm …

High efficiency power amplifiers for modern mobile communications: The load-modulation approach

C Ramella, A Piacibello, R Quaglia, V Camarchia… - Electronics, 2017 - mdpi.com
Modern mobile communication signals require power amplifiers able to maintain very high
efficiency in a wide range of output power levels, which is a major issue for classical power …

Asymmetrical load modulated balanced amplifier with continuum of modulation ratio and dual-octave bandwidth

Y Cao, H Lyu, K Chen - IEEE Transactions on Microwave …, 2020 - ieeexplore.ieee.org
This article presents a new load-modulation power amplifier (PA) architecture—
asymmetrical load-modulated balanced amplifier (ALMBA). It is for the first time discovered …

Power amplifiers for mm-wave 5G applications: Technology comparisons and CMOS-SOI demonstration circuits

PM Asbeck, N Rostomyan, M Özen… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
A review is presented of key power amplifier (PA) performance requirements for millimeter-
wave 5G systems, along with a comparison of the potential of different semiconductor …

Improved three-stage Doherty amplifier design with impedance compensation in load combiner for broadband applications

J Xia, W Chen, F Meng, C Yu… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
This paper presents a broadband three-stage Doherty power amplifier (DPA) using
impedance compensation for bandwidth extension. Different from the conventional design …

28 GHz Doherty power amplifier in CMOS SOI with 28% back-off PAE

N Rostomyan, M Özen, P Asbeck - IEEE Microwave and …, 2018 - ieeexplore.ieee.org
A single-stage, symmetric Doherty power amplifier (PA) in 45 nm CMOS silicon on insulator
at 28 GHz is presented. The PA achieves a saturated output power of 22.4 dBm, a peak …

Analysis and design of a Doherty-like RF-input load modulated balanced amplifier

PH Pednekar, W Hallberg, C Fager… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
This paper presents an analysis and design technique for an RF-input load modulated
balanced amplifier (LMBA) with Doherty-like efficiency enhancement characteristics. The …

A 28-GHz SOI-CMOS Doherty power amplifier with a compact transformer-based output combiner

Z Zong, X Tang, K Khalaf, D Yan… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
This article presents a series voltage-combining Doherty power amplifier (PA) achieving
high output power (P out) and high power-back-off (PBO) efficiency for 28-GHz fifth …

A Doherty power amplifier with extended high-efficiency range using three-port harmonic injection network

X Zhou, WS Chan, T Sharma, J Xia… - … on Circuits and …, 2022 - ieeexplore.ieee.org
In this paper, a Doherty power amplifier (DPA) using a novel three-port harmonic injection
network (HIN) to extend its high-efficiency range is proposed. With the help of a part of the …