Thin-film transistors for large-area electronics

D Geng, K Wang, L Li, K Myny, A Nathan, J Jang… - Nature …, 2023 - nature.com
Thin-film transistors (TFTs) are a key technology in large-area electronics and can be
manufactured uniformly over large areas—on glass or flexible substrates—at lower …

Self-assembled monolayers: Versatile uses in electronic devices from gate dielectrics, dopants, and biosensing linkers

S Kim, H Yoo - Micromachines, 2021 - mdpi.com
Self-assembled monolayers (SAMs), molecular structures consisting of assemblies formed
in an ordered monolayer domain, are revisited to introduce their various functions in …

Significant performance and stability improvement of low-voltage InZnO thin-film transistors by slight La doping

W Cai, M Li, H Li, Q Qian, Z Zang - Applied Physics Letters, 2022 - pubs.aip.org
Low-voltage, solution-processed oxide thin-film transistors (TFTs) have shown great
potential in next-generation low-power, printable electronics. However, it is now still quite …

One-volt, solution-processed InZnO thin-film transistors

W Cai, H Li, Z Zang - IEEE Electron Device Letters, 2021 - ieeexplore.ieee.org
In this letter, we report solution-processed, high-performance Indium-Zinc-Oxide (IZO) thin-
film transistors (TFTs). The annealing temperature of IZO films are studied and found that …

Enhanced electrical performance and bias‐stress stability of solution‐processed bilayer metal oxide thin‐film transistors

QJ Sun, J Wu, M Zhang, Y Yuan, X Gao… - … status solidi (a), 2022 - Wiley Online Library
Herein, solution‐processed indium gallium zinc oxide (IGZO) thin‐film transistors (TFTs) with
a bilayer structure are investigated by embedding an ultrathin layer of indium zinc oxide …

Performance enhancement of solution-processed p-type CuI TFTs by self-assembled monolayer treatment

M Wang, H Li, Q Xin, M Zhuang, Z Wang, Y Yuan… - Applied Surface …, 2023 - Elsevier
Self-assembled monolayer (SAM) treatment of gate dielectrics plays a key role in the
improvement of the electrical performance of organic thin-film transistors (TFTs) by reducing …

Experimental realization of strain-induced room-temperature ferroelectricity in SrMnO3 films via selective oxygen annealing

H An, YG Choi, YR Jo, HJ Hong, JK Kim, O Kwon… - NPG Asia …, 2021 - nature.com
Abstract Antiferromagnetic-paraelectric SrMnO3 (SMO) has aroused interest because of the
theoretical strong coupling between the ferroelectric and ferromagnetic states with …

Gate dielectric treated by self-assembled monolayers (SAMs) to enhance the performance of InSnZnO thin-film transistors

W Zhong, J Zhang, Y Liu, L Tan, L Lan… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Self-assembled monolayer (SAM) treatment of gate dielectrics is a standard process for
manufacturing organic thin-film transistors (TFTs) to reduce interface trap density and …

ZrHfO2-PMMA hybrid dielectric layers for high-performance all solution-processed In2O3-based TFTs

MGS Rao, KCS Reddy, J Meza-Arroyo… - Materials Research …, 2022 - Elsevier
Recently inorganic-organic hybrid materials have been quickly arisen as promising
dielectric candidates for their applications in the fabrication of solution-processed metal …

Enhanced electrical and mechanical performance of InSnZnO TFTs with multifunctional laminated organic passivation layer

D Lin, X Li, W Zhong, C Zhou, L Lan… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
To realize high-performance and stable electrical characteristics for ZnO-based thin-film
transistors (TFTs) under various environments, we propose InSnZnO (ITZO) TFTs with …