Here, we demonstrate an InGaAs/GaAs quantum-wells (QWs) based vertical-external cavity
surface emitting laser (VECSEL) with multi-watt emitting beyond 1200 nm. The development …

Semiconductor disk lasers (SDLs) have emerged at the frontier of laser technologies. Here,
the chip design, packaging process, resonator, pumping strategy, etc. are optimized for the …

We report room temperature (RT) continuous-wave (CW) lasing of quantum well (QW) lasers
grown on (001) Si substrates emitting at 980 nm. Two different QW structures, including …

High-efficiency laser diodes often adopt high mirror loss design to improve the external
differential efficiency of the device. However, the significantly elevated threshold carrier …

A systematic investigation of the changes in structural and optical properties of a semi-
insulating GaAs (001) wafer under high-energy electron irradiation is presented in this study …

The refinement of interface structure in InGaAs/AlGaAs multiple quantum wells (MQWs)
through molecular beam epitaxy (MBE) is crucial for enhancing their luminescence …

A 1083 nm laser, corresponding to a characteristic spectral line of 3He 23S1-23P, is the core
light source for spin-exchange optical pumping-free technology, and thus has important …

The temperature and excitation-power-dependent photoluminescence (PL) spectra of In
0.29 Ga 0.71 As/GaAs multiple quantum wells (MQWs) grown by metal-organic chemical …

Введение. Твердый раствор Ga1-x In x As имеет широкое применение в современной
оптоэлектронике в качестве материала для pin фотодетекторов и лазеров …

Abstract Solid solution Ga 1–x In x As is widely used in modern optoelectronics as a material
for pin photodetectors, lasers emitting in the spectral range 1.3–1.55 μm. In this paper, the …