Prospects of III-nitride optoelectronics grown on Si

D Zhu, DJ Wallis, CJ Humphreys - Reports on Progress in …, 2013 - iopscience.iop.org
The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications
such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and …

The efficiency challenge of nitride light‐emitting diodes for lighting

C Weisbuch, M Piccardo, L Martinelli… - … status solidi (a), 2015 - Wiley Online Library
We discuss the challenges of light‐emitting diodes in view of their application to solid‐state
lighting. The requirement is to at least displace the quite efficient fluorescent, sodium, and …

Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for …

J Iveland, L Martinelli, J Peretti, JS Speck, C Weisbuch - Physical review letters, 2013 - APS
We report on the unambiguous detection of Auger electrons by electron emission
spectroscopy from a cesiated InGaN/GaN light-emitting diode under electrical injection …

Disentangling the impact of point defect density and carrier localization-enhanced auger recombination on efficiency droop in (In, Ga) N/GaN quantum wells

RM Barrett, JM McMahon, R Ahumada-Lazo… - ACS …, 2023 - ACS Publications
The internal quantum efficiency of (In, Ga) N/GaN quantum wells can surpass 90% for blue-
emitting structures at moderate drive current densities but decreases significantly for longer …

Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells

S Schulz, MA Caro, C Coughlan, EP O'Reilly - Physical Review B, 2015 - APS
We present an atomistic description of the electronic and optical properties of In 0.25 Ga
0.75 N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy …

[PDF][PDF] High-speed visible light communication based on micro-LED: A technology with wide applications in next generation communication

T Lu, X Lin, W Guo, CC Tu, S Liu, CJ Lin… - Opto-Electronic …, 2022 - researching.cn
The evolution of next-generation cellular networks is aimed at creating faster, more reliable
solutions. Both the next-generation 6G network and the metaverse require high transmission …

High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate

MM Muhammed, N Alwadai, S Lopatin… - … applied materials & …, 2017 - ACS Publications
We demonstrate a state-of-the-art high-efficiency GaN-based vertical light-emitting diode
(VLED) grown on a transparent and conductive (− 201)-oriented (β-Ga2O3) substrate …

Polar (,)/ Quantum Wells: Revisiting the Impact of Carrier Localization on the “Green Gap” Problem

DSP Tanner, P Dawson, MJ Kappers, RA Oliver… - Physical Review …, 2020 - APS
We present a detailed theoretical analysis of the electronic and optical properties of c-plane
In Ga N/Ga N quantum-well structures with In contents ranging from 5% to 25%. Special …

[HTML][HTML] The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells

P Dawson, S Schulz, RA Oliver, MJ Kappers… - Journal of Applied …, 2016 - pubs.aip.org
In this paper, we compare and contrast the experimental data and the theoretical predictions
of the low temperature optical properties of polar and nonpolar InGaN/GaN quantum well …

High-brightness lasing at submicrometer enabled by droop-free fin light-emitting diodes (LEDs)

B Nikoobakht, RP Hansen, Y Zong, A Agrawal… - Science …, 2020 - science.org
“Efficiency droop,” ie, a decline in brightness of light-emitting diodes (LEDs) at high electrical
currents, limits the performance of all commercial LEDs and has limited the output power of …