Optimization of edge termination techniques for β-Ga2O3 Schottky rectifiers
To realize the potential of Gallium oxide (Ga 2 O 3) Schottky rectifiers fabricated for high
voltage and fast switching applications, various edge termination techniques to maximize …
voltage and fast switching applications, various edge termination techniques to maximize …
New trends in high voltage MOSFET based on wide band gap materials
P Godignon, V Soler, M Cabello… - 2017 international …, 2017 - ieeexplore.ieee.org
Recent advances and new trends in high voltage SiC based MOSFETs are analyzed. The
main focus is done on design optimization strategies for reducing the on-state resistance …
main focus is done on design optimization strategies for reducing the on-state resistance …
[HTML][HTML] Breakdown voltage capability of vertical 4H–SiC power devices
P Godignon, J Biscarrat, M Tranchesset… - Materials Science in …, 2024 - Elsevier
Power semiconductor devices are constructed to endure high voltages (> 30 V) and manage
high current density. Edge termination is a specific feature that must be integrated into the …
high current density. Edge termination is a specific feature that must be integrated into the …
A novel LDMOS with circular drift region for uniform electric field distribution
In this paper, a lateral double diffused MOS which features a circular drift region (Cir-
LDMOS) is proposed and investigated by numerical simulation. The circular drift region in …
LDMOS) is proposed and investigated by numerical simulation. The circular drift region in …
Geometrical effects in JTE rings termination for 4H-SiC medium-voltage devices
Compared with a conventional junction termination extension (JTE) structure, JTE rings
termination used in power devices could achieve a higher blocking performance without any …
termination used in power devices could achieve a higher blocking performance without any …
Dynamic Characterization and Robustness Test of High Voltage SiC MOSFETs
V Soler, M Cabello, V Banu, J Montserrat… - Materials Science …, 2019 - Trans Tech Publ
This work addresses the electrical behaviour of high-voltage (HV) SiC MOSFETs, being the
main motivation to check their robustness. Large area (25 mm 2) devices rated for 3.3 kV …
main motivation to check their robustness. Large area (25 mm 2) devices rated for 3.3 kV …
Electro-Thermal Analysis and Edge Termination Techniques of High Current β-Ga2 O3 Schottky Rectifiers
The performance and limitations of β-Ga 2 O 3 Schottky rectifiers is studied via simulation
using the Florida Object Oriented Device and Process (FLOODS) TCAD simulator. The effect …
using the Florida Object Oriented Device and Process (FLOODS) TCAD simulator. The effect …
An Investigative Study of Dopant Diffusion in Gallium Oxide and Design Optimization of β-Ga2O3 Schottky Rectifiers
R Sharma - 2020 - search.proquest.com
Gallium oxide devices have been attracting a lot of attention in power electronics, truly solar
blind (UV) photodetectors, gas sensors, and space applications. Even though Ga 2 O 3 is in …
blind (UV) photodetectors, gas sensors, and space applications. Even though Ga 2 O 3 is in …
Wide bandgap semiconductor device with vertical superjunction edge termination for the drift region
CA Martino - US Patent 9,978,832, 2018 - Google Patents
US9978832B1 - Wide bandgap semiconductor device with vertical superjunction edge
termination for the drift region - Google Patents US9978832B1 - Wide bandgap …
termination for the drift region - Google Patents US9978832B1 - Wide bandgap …