Near-junction thermal managements of electronics
Near-junction thermal management of electronics has received a lot of attention in the past
decades but there are still many challenges in this area. This chapter provides a …
decades but there are still many challenges in this area. This chapter provides a …
Effects of gate length on GaN HEMT performance at room temperature
We report the electrical characteristics at room temperature of (Al, Ga) N/GaN high-electron-
mobility transistors with different gate lengths L g ranging from 0.15 to 2 μm. Static …
mobility transistors with different gate lengths L g ranging from 0.15 to 2 μm. Static …
High-periphery GaN HEMT modeling up to 65 GHz and 200° C
In this article, we report on the temperature-dependent GaN HEMT behavior. To evaluate the
potentialities of this kind of active solid-state electronic device at its best, the experiments are …
potentialities of this kind of active solid-state electronic device at its best, the experiments are …
Worst-case bias for high voltage, elevated-temperature stress of AlGaN/GaN HEMTs
The effects of high-field stress are evaluated for industrial-quality AlGaN/GaN HEMTs as a
function of bias and temperature. Positive and negative threshold voltage shifts are …
function of bias and temperature. Positive and negative threshold voltage shifts are …
Scalable modeling of transient self-heating of GaN high-electron-mobility transistors based on experimental measurements
This paper details an extraction procedure to fully model the transient self-heating of
transistors from a GaN HEMT technology. Frequency-resolved gate resistance thermometry …
transistors from a GaN HEMT technology. Frequency-resolved gate resistance thermometry …
Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries
S Martin-Horcajo, A Wang, A Bosca… - Semiconductor …, 2015 - iopscience.iop.org
Trapping effects were evaluated by means of pulsed measurements under different
quiescent biases for GaN/AlGaN/GaN and GaN/InAlN/GaN. It was found that devices with an …
quiescent biases for GaN/AlGaN/GaN and GaN/InAlN/GaN. It was found that devices with an …
Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2O3 as Gate Dielectric
Z Gao, MF Romero, MÁ Pampillón… - … on Electron Devices, 2016 - ieeexplore.ieee.org
Thermal stability of AlGaN/GaN metal–oxide–semiconductor high-electron mobility
transistors (MOS-HEMTs) and diodes using Gd 2 O 3 is investigated by means of different …
transistors (MOS-HEMTs) and diodes using Gd 2 O 3 is investigated by means of different …
Simulation of gate leakage current of AlGaN/GaN HEMTs: Effects of the gate edges and self-heating
A Wang, L Zeng, W Wang - ECS Journal of Solid State Science …, 2017 - iopscience.iop.org
The gate leakage current (IG) of AlGaN/GaN high electron mobility transistors (HEMTs) at
various ambient temperatures is simulated by considering its mechanism as domination of …
various ambient temperatures is simulated by considering its mechanism as domination of …
[HTML][HTML] Three-dimensional steady and transient fully coupled electro-thermal simulation of AlGaN/GaN high electron mobility transistors: Effects of lateral heat …
A Wang, L Zeng, W Wang - AIP Advances, 2017 - pubs.aip.org
In this paper, we develop three-dimensional fully coupled electro-thermal (ET) simulation for
AlGaN/GaN high electron mobility transistors (HEMTs), which is a relative complete and …
AlGaN/GaN high electron mobility transistors (HEMTs), which is a relative complete and …