Fermi-level tuning of G-doped layers

A Tavkhelidze, A Bibilashvili, L Jangidze, NE Gorji - Nanomaterials, 2021 - mdpi.com
Recently, geometry-induced quantum effects were observed in periodic nanostructures.
Nanograting (NG) geometry significantly affects the electronic, magnetic, and optical …

Structural-phase transition in (Cu2Te)(ZnTe) at high temperature

HB Gasimov, RM Rzayev - International Journal of Modern Physics …, 2021 - World Scientific
Cu2Te single crystal was grown by the Bridgman method. X-ray diffraction (XRD) study of
Cu2Te single crystals in the temperature range of 293–893 K was performed and possible …

Change of thermophysical parameters of polypropylene-metal oxide nanocomposite (polypropylene + ZrO2) after electric field influence

HS Ibrahimova, HA Shirinova… - Polymers and …, 2022 - journals.sagepub.com
In this work, the influence of an electric field on thermophysical properties of the PP+ ZrO2
nanocomposites has been investigated. Changes in thermograms before and after applying …

[PDF][PDF] Photoelectrical properties of p-Si/Cd1-xZnxS (Se)(Te) y heterojunctions

HM Mammadov, MA Jafarov, EF Nasirov… - Chalcogenide …, 2021 - chalcogen.ro
The photovoltaic heterojunction based on AIIBVI type compounds has been found to be
candidate for inexpensive and high performance alternative to the homojunction …

Construction and current–voltage properties of nanofilm CdS@ Cd/Si heterojunctions by the direct current magnetron sputtering and solvothermal methods

PF Ji, YJ Hao, Y Li, YL Song, FQ Zhou - Bulletin of Materials Science, 2024 - Springer
Abstract Nanofilm CdS@ Cd/Si heterojunctions have been fabricated by a two-step method.
The obvious rectification effect can be observed. However, the leakage current density is …

A prototypical near-infrared light-emitting diode from CdS/Si heterojunctions based on the defect emissions in the interface

YJ Ma, PF Ji, Y Li, YL Song, FQ Zhou - Journal of Luminescence, 2021 - Elsevier
Optimizing and tuning the interface to enhance the performance of heterojunctions is an
important research topic in the optoelectronic fields. In the present work, a CdS layer of∼ 5.0 …

Effect of gamma irradiation and Dy atoms on the thermal conductivity of TlInSe2 crystals

NA Verdieva, MB Jafarov, RM Rzayev… - International Journal of …, 2024 - World Scientific
TlInSe2 crystals were grown by Bridgman method. The thermal conductivity coefficient was
studied in the temperature range of 80–600 K, along and perpendicular to the …

The formation of phase transitions in CuNiS under the influence of gamma irradiation

GM Damirov - International Journal of Modern Physics B, 2023 - World Scientific
The concentrations of forming defects during phase transitions (PTs) and elastic coefficients
in the Cu 1. 9 5 Ni 0. 0 5 S compound were determined based on differential thermal …

Synthesis and physico-chemical studies of alloys of the As2Se3–CuCr2Te4 system and properties of the obtained composite materials

II Aliyev, SS Ismailova, RM Rzayev… - … Physics Letters B, 2022 - World Scientific
Alloys of the As2Se3–CuCr2Te4 system were synthesized in a wide range of
concentrations, and their physico-chemical properties were studied by differential thermal …

Photoluminescence of in wide excitation intensity and temperature range

BD Urmanov, MS Leanenia, GP Yablonskii… - … Physics Letters B, 2021 - World Scientific
Photoluminescence properties of Ca 4 Ga 2 S 7: Eu 2+ chalcogenide semiconductors have
been studied under the impulse laser excitation in the range of 10–105 W/cm2 at room …