InGaN thin films were deposited on silicon (1 0 0) single crystal substrates by RF magnetron
sputtering in an Ar atmosphere, at a pressure of 8× 10− 2 Torr, by using In and GaN targets …

Abstract In x Ga 1-x As y Sb 1-y epilayers with a fixed In content of x= 0.145 were grown on
GaSb (100) substrates using liquid-phase epitaxy (LPE). The lattice mismatch between the …

InP-In 2 O 3 colloidal quantum dots (QDs) synthesized by a single-step chemical method
without injection of hot precursors (one-pot) were investigated. Specifically, the effect of the …

GaAs layers were grown using the closed space vapor transport (CSVT) technique on GaAs
(100) and Si (100) substrates, with and without Graphene (G) as 2D interlayer. We show that …

We investigated p-and n-type In 0.145 Ga 0.855 As 0.108 Sb 0.892 semiconductor alloys
grown on GaSb (100) substrates by the liquid phase epitaxy (LPE) technique with different …

InGaAsSb/AlGaAsSb multiple quantum wells (MQWs) hold significant potential for mid-
infrared optoelectronics. However, their optical and structural behavior at high temperatures …

Antimonide-based family holds the potential for developing a new generation of mid-infrared
applications. Here, we report on the growth of InSb x As 1-x alloys on n− and p− type GaSb …

Antimonide− based p− n junctions are particularly attractive for a wide variety of
optoelectronic applications in the near and mid-infrared wavelength range. In this work …

GaInAsSbBi solid solutions with different Bi contents are synthesized on n-GaSb substrates
with a misorientation of 6 between the (100) and (111) A planes. Structural properties and …

Abstract Barium antimonate (BaSb 2 O 6) powders were prepared using a microwave-
assisted wet chemistry process. The powders were calcined at 800° C and their crystallinity …