The scaling of metal oxide semiconductor field effect transistors (MOSFETs) for data storing
and logic circuit operation has reached a critical point, beyond which further scaling poses …

Designing advanced single-digit shape-anisotropy MRAM cells requires an accurate
evaluation of spin currents and torques in magnetic tunnel junctions (MTJs) with elongated …

We demonstrate an energy efficient method of radio frequency (RF) detection for two bands
(and band) using a magnetic tunnel junction-based nanopillar. For a carefully chosen …

Non-volatility is an emerging solution to stand-by power leakages caused by the down-
scaling of traditional semiconductor components. Spin-transfer torque magnetoresistive …

The modulation bandwidth () is a critical figure-of-merit for wireless communication
applications of spin torque nano-oscillators (STNOs) as it determines the maximum data …

A nanopillar of a magnetic tunnel junction (MTJ) consisting of two magnetic layers (free and
fixed) separated by an oxide barrier can be used as a microwave generator, and also as a …

The conditions of field and voltage for inducing steady state excitations in fully perpendicular
magnetic tunnel junctions (pMTJs), adapted for memory applications, were numerically …

This article focuses on the spin-torque ferromagnetic resonance (STFMR) technique, which
was developed and optimized to investigate spin-transfer effects in magnetic tunnel …

Structural and compositional characteristics of MgO-based magnetic tunnel junctions were
characterized using advanced transmission electron and focused-ion beam microscopies …