Achieving software-equivalent accuracy for hyperdimensional computing with ferroelectric-based in-memory computing

A Kazemi, F Müller, MM Sharifi, H Errahmouni… - Scientific reports, 2022 - nature.com
Hyperdimensional computing (HDC) is a brain-inspired computational framework that relies
on long hypervectors (HVs) for learning. In HDC, computational operations consist of simple …

[HTML][HTML] SPICE compatible semi-empirical compact model for ferroelectric hysteresis

M Lederer, R Olivo, N Yadav, S De, K Seidel… - Solid-State …, 2023 - Elsevier
This paper reports a semi-empirical, SPICE compatible and computationally efficient
compact model for ferroelectric capacitors (Fe-CAP) description. This compact model is …

Effect of floating gate insertion on the analog states of ferroelectric field-effect transistors

S Lee, Y Lee, G Kim, T Kim, T Eom… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this work, we propose a structural approach to mitigate device-to-device variation and
performance degradation of ferroelectric (FE) field-effect transistors (FeFETs) due to the …

Joint modeling of multi-domain ferroelectric and distributed channel towards unveiling the asymmetric abrupt DC current jump in ferroelectric FET

S Thomann, K Ni, H Amrouch - ESSDERC 2022-IEEE 52nd …, 2022 - ieeexplore.ieee.org
We have developed a modeling framework to explain the experimentally-observed
asymmetric abrupt current jump in DC I DV G sweeps in ferroelectric FET (FeFET). We …

Effects of random ferroelectric and dielectric phase distributions on junctionless ferroelectric field effect transistors

H Huo, W Lü, Y Wang, S Zhao, X Zheng - Micro and Nanostructures, 2024 - Elsevier
In this study, we comprehensively investigated the effects of random ferroelectric (FE) and
dielectric (DE) phase distributions on junctionless ferroelectric field-effect transistors (JL …

Unique Consecutive RTN Characteristics Coupled with Ferroelectric Nanodomain Switching in Advanced Fe-FinFETs

F Zhang, H Yang, Q Zhang, Y Peng… - IEEE Electron …, 2024 - ieeexplore.ieee.org
In this work, a consecutive random telegraph noise (RTN), characterized by a gradual
current decay after an abrupt current spike as the time elapses, is firstly observed and further …

Percolation theory-based KMC simulation for scaled Fe-FET based multi-bit computing-in-memory with temperature compensation strategy

Q Zhu, L Xu, Z Zhou, W Wei, P Xv, C Dou… - …, 2025 - iopscience.iop.org
In this letter, we investigated the impact of percolation transport mechanisms on ferroelectric
field effect transistor (FeFET) multi-value storage with Kinetic Monte-Carlo (KMC) simulation …

[图书][B] Cross-Layer Design with Emerging Devices for Machine Learning Applications

A Kazemi - 2023 - search.proquest.com
Modern-day computers heavily rely on the von Neumann architecture where the data is
moved from memory to processing units for computation which is commonly referred to as …