Antiferroelectricity and wake-up observed in thin hafnium-oxide-based ferroelectrics are examined from the viewpoint of a macroscopic, quantitative model incorporating …
The emergence of ferroelectric and antiferroelectric properties in the semiconductor industry's most prominent high‐k dielectrics, HfO2 and ZrO2, is leading to technology …
Over a decade ago, ferroelectricity was discovered in doped HfO2 thin films. The HfO2- based thin films have attracted much attention due to their remarkable scalability and CMOS …
In the last decades, ferroelectricity has been discovered in Si-doped HfO2 and Hf1–x Zr x O2 thin films, and the origin of ferroelectricity is considered to be the presence of the polar Pca …
The unique nonlinear dielectric properties of antiferroelectric (AFE) oxides are promising for advancements in solid state supercapacitor, actuator, and memory technologies. AFE …
We investigate ferroelectric thin films of ZrO2 experimentally and theoretically using infrared (IR) absorption spectroscopy coupled with density functional theory (DFT) calculations. The …
Abstract The impact of La, Zr and Hf content on the crystal phases and ferroelectric and dielectric properties of (Hf, Zr, La) O 2 has been determined by investigating epitaxial films …
SH Yi, BT Lin, TY Hsu, J Shieh, MJ Chen - Journal of the European Ceramic …, 2019 - Elsevier
In this study, tailoring the microstructures and ferroelectric (FE)/antiferroelectric (AFE) properties of nanoscale ZrO 2 thin films is demonstrated with an intentional introduction of …
The microstructure in fluorite-structure oxide-based ferroelectric thin films, especially when on standard semiconductor manufacturing platforms, is poly-/nano-crystalline, which …